|
|
AOT7N60のメーカーはAlpha & Omega Semiconductorsです、この部品の機能は「7A N-Channel MOSFET」です。 |
部品番号 | AOT7N60 |
| |
部品説明 | 7A N-Channel MOSFET | ||
メーカ | Alpha & Omega Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとAOT7N60ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
AOT7N60/AOTF7N60
600V,7A N-Channel MOSFET
General Description
Product Summary
The AOT7N60 & AOTF7N60 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT7N60L & AOTF7N60L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
700V@150℃
7A
< 1.2Ω
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT7N60
AOTF7N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
7 7*
4.8 4.8*
28
3
135
270
50
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
192
1.54
38.5
0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT7N60
65
0.5
AOTF7N60
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.65
3.25
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.6.0: July 2013
www.aosmd.com
Page 1 of 6
1 Page AOT7N60/AOTF7N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 100
10V
VDS=40V
12 -55°C
6.5V
10
9 6V
6
3
VGS=5.5V
0
0 5 10 15 20 25 30
VDS (Volts)
Fig 1: On-Region Characteristics
2.2
2.0
1.8
1.6
1.4
1.2 VGS=10V
1.0
0.8
0 2 4 6 8 10 12 14 16
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
0.9
0.8
-100 -50 0 50 100 150 200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
125°C
1
25°C
0.1
2
3
468
VGS(Volts)
Figure 2: Transfer Characteristics
10
2.5 VGS=10V
ID=3.5A
2
1.5
1
0.5
0
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
1.0E+0400
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev.6.0: July 2013
www.aosmd.com
Page 3 of 6
3Pages AOT7N60/AOTF7N60
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
Res istive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off)
tf
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI AR
Vds
+Vgs
VDC Vdd
- Id
DUT
Vgs
BVDSS
IAR
Vds +
Vds -
Isd
Vgs
Ig
Diode RecoveryTes t Circuit & Waveforms
Qrr = - Idt
DUT
Vgs
L
Isd
IF dI/dt
trr
+
VDC Vdd
IRM
- Vds
Vdd
Rev.6.0: July 2013
www.aosmd.com
Page 6 of 6
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ AOT7N60 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AOT7N60 | 7A N-Channel MOSFET | Alpha & Omega Semiconductors |
AOT7N65 | 7A N-Channel MOSFET | Alpha & Omega Semiconductors |