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AOTF3N50 の電気的特性と機能

AOTF3N50のメーカーはAlpha & Omega Semiconductorsです、この部品の機能は「3A N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AOTF3N50
部品説明 3A N-Channel MOSFET
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 




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AOTF3N50 Datasheet, AOTF3N50 PDF,ピン配置, 機能
AOT3N50/AOTF3N50
www.datasheet4u.com
500V, 3A N-Channel MOSFET
General Description
The AOT3N50 & AOTF3N50 have been fabricated
using an advanced high voltage MOSFET process that
is designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
VDS (V) = 600V @ 150°C
ID = 3A
RDS(ON) < 3
(VGS = 10V)
100% UIS Tested!
100% R g Tested!
TO-220
Top View
TO-220F
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT3N50 AOTF3N50
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C, G
Repetitive avalanche energy C, G
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
3
1.9
9
2
60
120
3*
1.9*
Peak diode recovery dv/dt
dv/dt
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
74 31
0.6 0.25
Junction and Storage Temperature Range TJ, TSTG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter
Symbol
AOT3N50 AOTF3N50
Maximum Junction-to-Ambient A,D
Maximum Case-to-Sink A
RθJA
RθCS
65
0.5
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.7
4.0
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

1 Page





AOTF3N50 pdf, ピン配列
AOT3N50 / AOTF3N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
5
www.datashee4t4u.com
3
2
1
10V
6.5V
6V
VGS=5.5V
10
VDS=40V
-55°C
125°C
1
25°C
0
0
5.0
5 10 15 20 25
VDS (Volts)
Fig 1: On-Region Characteristics
30
0.1
2
3
468
VGS(Volts)
Figure 2: Transfer Characteristic2s00
16
10
4.0
2.5 VGS=10V
ID=1.5A
2
3.0 1.5
2.0 VGS=10V
1.0
01234567
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
1
0.5
0
-100
-50
0
50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
125°C
1.1
1.0E+00
1
1.0E-01
25°C
1.0E-02
0.9
1.0E-03
0.8
-100 -50 0 50 100 150 200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
1.0E-04
0.2
0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


3Pages


AOTF3N50 電子部品, 半導体
AOT3N50 / AOTF3N50
www.datasheet4u.com +
VDC
-
Vgs
Ig
Vds
Vgs
Rg
Vgs
Vds
Id
Vgs
Rg
Vgs
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Res istive Switching Test Circuit & Waveforms
RL
Charge
DUT
+
VDC Vdd
-
Vds
Vgs
t d(on) t r
t d(off)
tf
t on t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
2
AR
Vds
+Vgs
VDC Vdd
- Id
DUT
Vgs
90%
10%
BVDSS
IAR
Vds +
Vds -
Isd
Vgs
Ig
Diode Recovery Test Circuit & Waveforms
DUT
Qrr = - Idt
Vgs
L
Isd
IF dI/dt
trr
+
VDC Vdd
IRM
- Vds
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
AOTF3N50

3A N-Channel MOSFET

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors


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