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IRGP20B60PDPBF の電気的特性と機能

IRGP20B60PDPBFのメーカーはInternational Rectifierです、この部品の機能は「WARP2 SERIES IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGP20B60PDPBF
部品説明 WARP2 SERIES IGBT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGP20B60PDPBF Datasheet, IRGP20B60PDPBF PDF,ピン配置, 機能
SMPS IGBT
PD - 95558
IRGP20B60PDPbF
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
www.datasheet4u.com
Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Lead-Free
Features
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@ VGE = 15V IC = 13.0A
Equivalent MOSFET
Parameters 
RCE(on) typ. = 158m
ID (FET equivalent) = 20A
E
GC
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Max.
600
40
22
80
80
31
12
42
±20
220
86
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.58
2.5
–––
40
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
7/27/04

1 Page





IRGP20B60PDPBF pdf, ピン配列
45
40
35
30
25
www.datasheet4u.com
20
15
10
5
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
100
10
1
0
10
100 1000
VCE (V)
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
40
35
VGE = 15V
VGE = 12V
30
VGE = 10V
VGE = 8.0V
25 VGE = 6.0V
20
15
10
5
0
0123456
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
www.irf.com
IRGP20B60PDPbF
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
40
35 VGE = 15V
VGE = 12V
30 VGE = 10V
VGE = 8.0V
25 VGE = 6.0V
20
15
10
5
0
0123456
VCE (V)
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
40
35 VGE = 18V
VGE = 15V
30 VGE = 12V
VGE = 10V
25 VGE = 8.0V
20
15
10
5
0
0123456
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
3


3Pages


IRGP20B60PDPBF 電子部品, 半導体
IRGP20B60PDPbF
80
www.datasheet4u.com
60
I F = 16A
IFF = 8.0A
IF = 4.0A
40
20
0
100
VR = 200V
TJ = 125°C
TJ = 25°C
di f /dt - (A/µs)
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
500
VR = 200V
TJ = 125°C
TJ = 25°C
400
IF = 16A
IF = 8.0A
IF = 4.0A
300
200
100
0
100
di f /dt - (A/µs)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
20
VR = 200V
TJ = 125°C
TJ = 25°C
16
I F = 16A
IF = 8.0A
I F = 4.0A
12
8
4
0
100
di f /dt - (A/µs)
1000
Fig. 20 - Typical Recovery Current vs. dif/dt
10000
VR = 200V
TJ = 125°C
TJ = 25°C
1000
IF = 16A
IF = 8.0A
IF = 4.0A
100
100
di f /dt - (A/µs)
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
1000
6 www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRGP20B60PDPBF

WARP2 SERIES IGBT

International Rectifier
International Rectifier


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