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IRGP20B60PDPBFのメーカーはInternational Rectifierです、この部品の機能は「WARP2 SERIES IGBT」です。 |
部品番号 | IRGP20B60PDPBF |
| |
部品説明 | WARP2 SERIES IGBT | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRGP20B60PDPBFダウンロード(pdfファイル)リンクがあります。 Total 11 pages
SMPS IGBT
PD - 95558
IRGP20B60PDPbF
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
www.datasheet4u.com
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
• Lead-Free
Features
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@ VGE = 15V IC = 13.0A
Equivalent MOSFET
Parameters
RCE(on) typ. = 158mΩ
ID (FET equivalent) = 20A
E
GC
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Max.
600
40
22
80
80
31
12
42
±20
220
86
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.58
2.5
–––
40
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
7/27/04
1 Page 45
40
35
30
25
www.datasheet4u.com
20
15
10
5
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
100
10
1
0
10
100 1000
VCE (V)
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
40
35
VGE = 15V
VGE = 12V
30
VGE = 10V
VGE = 8.0V
25 VGE = 6.0V
20
15
10
5
0
0123456
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
www.irf.com
IRGP20B60PDPbF
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
40
35 VGE = 15V
VGE = 12V
30 VGE = 10V
VGE = 8.0V
25 VGE = 6.0V
20
15
10
5
0
0123456
VCE (V)
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
40
35 VGE = 18V
VGE = 15V
30 VGE = 12V
VGE = 10V
25 VGE = 8.0V
20
15
10
5
0
0123456
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
3
3Pages IRGP20B60PDPbF
80
www.datasheet4u.com
60
I F = 16A
IFF = 8.0A
IF = 4.0A
40
20
0
100
VR = 200V
TJ = 125°C
TJ = 25°C
di f /dt - (A/µs)
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
500
VR = 200V
TJ = 125°C
TJ = 25°C
400
IF = 16A
IF = 8.0A
IF = 4.0A
300
200
100
0
100
di f /dt - (A/µs)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
20
VR = 200V
TJ = 125°C
TJ = 25°C
16
I F = 16A
IF = 8.0A
I F = 4.0A
12
8
4
0
100
di f /dt - (A/µs)
1000
Fig. 20 - Typical Recovery Current vs. dif/dt
10000
VR = 200V
TJ = 125°C
TJ = 25°C
1000
IF = 16A
IF = 8.0A
IF = 4.0A
100
100
di f /dt - (A/µs)
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
1000
6 www.irf.com
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRGP20B60PDPBF | WARP2 SERIES IGBT | International Rectifier |