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4525GEHのメーカーはAdvanced Power Electronicsです、この部品の機能は「 AP4525GEH」です。 |
部品番号 | 4525GEH |
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部品説明 | AP4525GEH | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューと4525GEHダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Advanced Power
Electronicswww.datasheet4u.com Corp.
AP4525GEH
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
Description
S1
G1
S2
G2
D1/D2
N-CH
P-CH
TO-252-4L
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
40V
28mΩ
15A
-40V
42mΩ
-12A
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D1
G1
G2
D2
S1
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
40 -40
±16 ±16
15.0 -12.0
12.0 -10.0
50 -50
10.4
0.083
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
12
110
S2
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
℃/W
Data and specifications subject to change without notice
1
200809235
1 Page AP4525GEH
wwwP.d-aCtasHheeEt4lue.cocmtrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-40 -
-
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A
- -0.03 -
- - 42
VGS=-4.5V, ID=-3A
- - 60
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.8 - -2.5
gfs
Forward Transconductance
VDS=-10V, ID=-5A
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=-32V, VGS=0V
IGSS Gate-Source Leakage
VGS=±16V
Qg Total Gate Charge2
ID=-5A
-5-
- - -1
- - -25
- - ±30
- 9 24
Qgs Gate-Source Charge
VDS=-20V
-2-
Qgd
td(on)
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-20V
-5-
- 8.5 -
tr Rise Time
ID=-5A
- 15 -
td(off)
Turn-off Delay Time
RG=3Ω,VGS=-10V
- 27 -
tf Fall Time
RD=4Ω
- 25 -
Ciss Input Capacitance
VGS=0V
- 770 1230
Coss Output Capacitance
VDS=-20V
- 165 -
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 115 -
Rg Gate Resistance
f=1.0MHz
- 69
Units
V
V/℃
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-12A, VGS=0V
IS=-5A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.8 V
- 20 - ns
- 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle<2%.
3.N-CH , P-CH are same .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
3Pages AP4525GEH
P-Channel
50
T A = 25 o C
www.datasheet4u.com
40
30
20
-10V
-7.0V
-5.0V
-4.5V
V G = - 3.0V
10
0
0123456
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
200
I D = -3 A
T A =25 o C
170
140
110
80
50
20
2 4 6 8 10
-V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
12
10
8
6
T j =150 o C
T j =25 o C
4
2
0
0.1 0.3 0.5 0.7 0.9 1.1 1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
50
T A = 150 o C
40
30
-10V
-7.0V
-5.0V
-4.5V
20 V G = - 3.0V
10
0
02468
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D = -5A
V G = -10V
1.4
1.2
1.0
0.8
25 50 75 100 125
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
6
6 Page | |||
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部品番号 | 部品説明 | メーカ |
4525GEH | AP4525GEH | Advanced Power Electronics |