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IRF6623PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF6623PBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF6623PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
l RoHS Compliant
l Lead-Free (Qualified up to 260°C Reflow)
wwlwA.dpatpalsichaeetito4un.cSopmecific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
PD - 97085
IRF6623PbF
IRF6623TRPbF
DirectFET Power MOSFET
VDSS
20V
RDS(on) max
5.7mΩ@VGS = 10V
9.7mΩ@VGS = 4.5V
Qg(typ.)
11nC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
ST
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-
turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
The IRF6623PbF balances both low resistance and low charge along with ultra low package inductance to reduce both
conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that
power the latest generation of processors operating at higher frequencies. The IRF6623PbF has been optimized for param-
eters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to
minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
iContinuous Drain Current, VGS @ 10V
ÃfContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
iPower Dissipation
fPower Dissipation
fPower Dissipation
dSingle Pulse Avalanche Energy
ÃAvalanche Current
Linear Derating Factor
20
±20
55
16
13
120
42
1.4
2.1
43
40
0.017
V
A
W
mJ
A
W/°C
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
-40 to + 150
°C
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
fjJunction-to-Ambient
gjJunction-to-Ambient
hjJunction-to-Ambient
ijJunction-to-Case
Junction-to-PCB Mounted
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
°C/W
Notes through are on page 2
www.irf.com
1
5/3/06
1 Page 1000
100
www.datasheet4u.com
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1
0.1
0.1
2.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100 TJ = 150°C
IRF6623PbF
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10
2.5V
1
0.1
≤ 60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1.5
ID = 15A
VGS = 10V
10
1
0.1
2.5
TJ = 25°C
VDS = 10V
≤ 60µs PULSE WIDTH
3.0 3.5 4.0 4.5
VGS, Gate-to-Source Voltage (V)
5.0
Fig 3. Typical Transfer Characteristics
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
12
ID= 11A
10
8
6
4
2
VDS= 20V
VDS= 10V
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0
0 10 20 30
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
3Pages IRF6623PbF
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
www.datashee+t4u.com
-
RG
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• di/dt controlled by RG
• Driver same type as D.U.T.
VDD +
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductoorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
*VGS=10V
VDD
ISD
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
S
G
S
D
D
D
6 www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF6623PBF | HEXFET Power MOSFET | International Rectifier |