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PDF IS41LV85120 Data sheet ( Hoja de datos )
| Número de pieza | IS41LV85120 | |
| Descripción | 512K x 8 (4-MBIT) DYNAMIC RAM | |
| Fabricantes | Integrated Silicon Solution | |
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IS41C85120
IS41LV85120
512K x 8 (4-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI®
PRELIMINARY INFORMATION
SEPTEMBER 2001
www.daFtaEshAeeTt4Uu.RcoEmS
• TTL compatible inputs and outputs
• Refresh Interval: 1024 cycles/16 ms
• Refresh Mode : RAS-Only, CAS-before-RAS
(CBR), and Hidden
• JEDEC standard pinout
• Single power supply
5V ± 10% (IS41C85120)
3.3V ± 10% (IS41LV85120)
• Industrail Temperature Range -40oC to 85oC
KEY TIMING PARAMETERS
Parameter
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
Max. Column Address Access Time (tAA)
Min. Fast Page Mode Cycle Time (tPC)
Min. Read/Write Cycle Time (tRC)
-35
35
10
18
12
60
-60 Unit
60 ns
15 ns
30 ns
25 ns
110 ns
PIN DESCRIPTIONS
A0-A9
I/O0-I/O7
WE
OE
RAS
CAS
VCC
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power
Ground
No Connection
DESCRIPTION
The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit
high-performance CMOS Dynamic Random Access
Memory. Both products offer accelerated cycle access EDO
Page Mode. EDO Page Mode allows 512 random accesses
within a single row with access cycle time as short as 10ns per
8-bit word. The Byte Write control, of upper and lower byte,
makes the IS41C85120 and IS41LV85120 ideal for use in 16
and 32-bit wide data bus systems.
These features make the IS41C85120 and IS41LV85120
ideally suited for high band-width graphics, digital signal
processing, high-performance computing systems, and pe-
ripheral applications.
The IS41C85120 and IS41LV85120 are available in a
28-pin, 400-mil SOJ package.
PIN CONFIGURATION
28-Pin SOJ
VCC
I/O0
I/O1
I/O2
I/O3
NC
WE
RAS
A9
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 GND
27 I/O7
26 I/O6
25 I/O5
24 I/O4
23 CAS
22 OE
21 NC
20 A8
19 A7
18 A6
17 A5
16 A4
15 GND
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
09/25/01
1
1 page  
IS41C85120
IS41LV85120
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters
Rating
Unit
VT Voltage on Any Pin Relative to GND
www.datasVheCeCt4u.com Supply Voltage
IOUT
PD
TA
TSTG
Output Current
Power Dissipation
Commercial Operation Temperature
Industrail Temperature
Storage Temperature
5V
3.3V
5V
3.3V
–1.0 to +7.0
-0.5 to 4.6
–1.0 to +7.0
-0.5 to 4.6
50
1
0 to +70
–40 to +85
–55 to +125
V
V
V
V
mA
W
°C
°C
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
ISSI ®
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VCC
VIH
VIL
TA
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Industrail Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min.
4.5
3.0
2.4
2.0
–1.0
–0.3
0
–40
Typ.
5.0
3.3
—
—
—
—
—
—
Max.
5.5
3.6
VCC + 1.0
VCC + 0.3
0.8
0.8
70
85
Unit
V
V
V
°C
°C
CAPACITANCE(1,2)
Symbol Parameter
Max.
CIN1 Input Capacitance: A0-A9
CIN2 Input Capacitance: RAS, CAS, WE, OE
CIO Data Input/Output Capacitance: I/O0-I/O7
5
7
7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz,
Unit
pF
pF
pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
09/25/01
5
5 Page 
IS41C85120
IS41LV85120
EARLY WRITE CYCLE (OE = DON'T CARE)
www.datasheet4u.com
RAS
tCRP
CAS
tASR
ADDRESS
Row
WE
I/O
tRAS
tRC
tRCD
tCSH
tRSH
tCAS tCLCH
tRAD
tRAH
tASC
tAR
tRAL
tCAH
tACH
Column
tWCR
tWCS
tCWL
tRWL
tWCH
tWP
tDHR
tDS
tDH
Valid Data
ISSI ®
tRP
Row
Don't Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
09/25/01
11
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet IS41LV85120.PDF ] | |
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