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IRHM8260 の電気的特性と機能

IRHM8260のメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED POWER MOSFET THRU-HOLE」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHM8260
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHM8260 Datasheet, IRHM8260 PDF,ピン配置, 機能
www.datasheet4u.com
PD - 91332D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
IRHM7260
JANSR2N7433
200V, N-CHANNEL
REF: MIL-PRF-19500/663
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM7260 100K Rads (Si)
IRHM3260 300K Rads (Si)
IRHM4260 600K Rads (Si)
IRHM8260 1000K Rads (Si)
R DS(on) ID QPL Part Number
0.07035*A JANSR2N7433
0.07035*A JANSF2N7433
0.07035*A JANSG2N7433
0.07035*A JANSH2N7433
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
35*
25 A
161
250 W
2.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy
500
Avalanche Current
35
Repetitive Avalanche Energy
25
Peak Diode Recovery dv/dt
5.7
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
9.3 (Typical )
V
mJ
A
mJ
V/ns
oC
g
*Current limited by pin diameter
For footnotes refer to the last page
www.irf.com
1
8/14/01

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IRHM8260 pdf, ピン配列
wwPRwra.deda-tiaIarstrhiaeoednt4iuaC.ctoihomanracteristics
IRHM7260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100 KRads(Si)
Min Max
300 - 1000K Rads (Si) Units
Min Max
Test Conditions
BVDSS
V/5JD
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source"
On-State Resistance (TO-3)
Static Drain-to-Source"
On-State Resistance (TO-254AA)
Diode Forward Voltage"
200
2.0
—
—
—
—
—
—
—
4.0
100
-100
25
0.070
0.070
1.8
200
1.25
—
—
—
—
—
4.5
100
-100
50
0.110
V
nA
µA
— 0.110
— 1.8 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=160V, VGS =0V
VGS = 12V, ID =25A
VGS = 12V, ID =25A
VGS = 0V, IS = 35A
1. Part numbers IRHM7260 (JANSR2N7433)
2. Part number IRHM3260,IRHM4260 and IRHM8260 (JANSF2N7433, JANSG2N7433 and JANSH2N7433)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
Energy Range
VDS(V)
MeV/(mg/cm )) (MeV)
(µm) @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V
Cu 28
285 43
190
180
170
125
—
Br 36.8
305 39
100
100
100
50
—
200
150
100
50
0
0
-5 -10 -15 -20
VGS
Cu
Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHM8260 電子部品, 半導体
wwIwR.dHatMas7he2et64u0.com
Pre-Irradiation
50
LIMITED BY PACKAGE
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com

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部品番号部品説明メーカ
IRHM8260

RADIATION HARDENED POWER MOSFET THRU-HOLE

International Rectifier
International Rectifier


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