IRHM7250 Datasheet PDF - International Rectifier
| Part Number | IRHM7250 | |
| Description | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Manufacturers | International Rectifier | |
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PD - 90674C
RADIATION HARDENED
IRHM7250
JANSR2N7269
POWER MOSFET
200V, N-CHANNEL
THRU-HOLE (TO-254AA)
REF: MIL-PRF-19500/603
RAD Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHM7250 100K Rads (Si) 0.10Ω 26A JANSR2N7269
IRHM3250 300K Rads (Si) 0.10Ω 26A JANSF2N7269
IRHM4250 600K Rads (Si) 0.10Ω 26A JANSG2N7269
IRHM8250 1000K Rads (Si) 0.10Ω 26A JANSH2N7269
TO-254AA
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Units
Continuous Drain Current
Continuous Drain Current
26
16 A
Pulsed Drain Current
104
Max. Power Dissipation
150 W
Linear Derating Factor
1.2 W/°C
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy
500
mJ
Avalanche Current
26 A
Repetitive Avalanche Energy
15 mJ
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
5.0
-55 to 150
V/ns
oC
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
10/11/00
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Pores-tI-rIrraraddiaiatitoionn
IRHM7250, JANSR2N7269
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response Fig 8b. VDSS Stress Equals
of Rad Hard HEXFET During 80% of BVDSS During Radiation
1x1012 Rad (Si)/Sec Exposure
www.irf.com
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRHM7250 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRHM7250.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| IRHM7250 | The function is RADIATION HARDENED POWER MOSFET THRU-HOLE. IRF |  |
| IRHM7250 | The function is RADIATION HARDENED POWER MOSFET THRU-HOLE. International Rectifier | |
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