DataSheet.jp

IRHM8250 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHM8250
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 12 pages
		

No Preview Available !

IRHM8250 Datasheet, IRHM8250 PDF,ピン配置, 機能
www.datasheet4u.com
PD - 90674C
RADIATION HARDENED
IRHM7250
JANSR2N7269
POWER MOSFET
200V, N-CHANNEL
THRU-HOLE (TO-254AA)
REF: MIL-PRF-19500/603
RAD HardHEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHM7250 100K Rads (Si) 0.1026A JANSR2N7269
IRHM3250 300K Rads (Si) 0.1026A JANSF2N7269
IRHM4250 600K Rads (Si) 0.1026A JANSG2N7269
IRHM8250 1000K Rads (Si) 0.1026A JANSH2N7269
TO-254AA
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Units
Continuous Drain Current
Continuous Drain Current
26
16 A
Pulsed Drain Current Œ
104
Max. Power Dissipation
150 W
Linear Derating Factor
1.2 W/°C
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy 
500
mJ
Avalanche Current Œ
26 A
Repetitive Avalanche Energy Œ
15 mJ
Peak Diode Recovery dv/dt Ž
Operating Junction
Storage Temperature Range
5.0
-55 to 150
V/ns
oC
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
10/11/00

1 Page





ページ 合計 : 12 ページ
PDF
ダウンロード
[ IRHM8250.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRHM8250

RADIATION HARDENED POWER MOSFET THRU-HOLE

International Rectifier
International Rectifier

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap