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PDF IRHM3150 Data sheet ( Hoja de datos )
| Número de pieza | IRHM3150 | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRHM3150 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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PD - 90675C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM7150
JANSR2N7268
100V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD Hard HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHM7150 100K Rads (Si) 0.065Ω 34A JANSR2N7268
IRHM3150 300K Rads (Si) 0.065Ω 34A JANSF2N7268
IRHM4150 600K Rads (Si) 0.065Ω 34A JANSG2N7268
IRHM8150 1000K Rads (Si) 0.065Ω 34A JANSH2N7268
TO-254AA
International Rectifiers RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Eyelets
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
34
21 A
136
150 W
1.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
500
34
15
5.5
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
8/14/01
1 page  
wwPwor.desa-ttaI-rsIrhraeaedtd4iuiaa.cttoiiomonn
IRHM7150
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response of
Rad Hard HEXFET During 1x1012
Rad (Si)/Sec Exposure
www.irf.com
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
5
5 Page 
wwPwr.dea-taI rshr eaedt4iua.ctoi omn
IRHM7150
15V
VDS
L
DRIVER
RG
V2G0VS tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 28a. Unclamped Inductive Test
Circuit
V(BR)DSS
tp
Fig 28c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 28b. Unclamped Inductive Waveforms
12 V
QGS
VG
QG
QGD
Charge
Fig 29a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRHM3150.PDF ] | |
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