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IRHM7054 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHM7054
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHM7054 Datasheet, IRHM7054 PDF,ピン配置, 機能
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PD - 90887E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM7054
JANSR2N7394
60V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD HardHEXFET® TECHNOLOGY
Product Summary
Part Number
IRHM7054
IRHM3054
Radiation Level
100K Rads (Si)
300K Rads (Si)
RDS(on)
0.027
0.027
ID QPL Part Number
35*A JANSR2N7394
35*A JANSF2N7394
IRHM4054 600K Rads (Si) 0.02735*A JANSG2N7394
IRHM8054 1000K Rads (Si) 0.02735*A JANSH2N7394
TO-254AA
International Rectifier’s RADHard HEXFET® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
35*
30 A
140
150 W
1.2 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy Á
500
mJ
IAR Avalanche Current À
35 A
EAR
Repetitive Avalanche Energy À
15 mJ
dv/dt
Peak Diode Recovery dv/dt Â
3.5 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063 in.(1.6mm) from case for 10s)
oC
Weight
9.3 (Typical )
g
For footnotes refer to the last page
*Current is limited by package
www.irf.com
1
08/30/04

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RADIATION HARDENED POWER MOSFET THRU-HOLE

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