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IRHM3054 の電気的特性と機能

IRHM3054のメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED POWER MOSFET THRU-HOLE」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHM3054
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHM3054 Datasheet, IRHM3054 PDF,ピン配置, 機能
www.datasheet4u.com
PD - 90887E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM7054
JANSR2N7394
60V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD HardHEXFET® TECHNOLOGY
Product Summary
Part Number
IRHM7054
IRHM3054
Radiation Level
100K Rads (Si)
300K Rads (Si)
RDS(on)
0.027
0.027
ID QPL Part Number
35*A JANSR2N7394
35*A JANSF2N7394
IRHM4054 600K Rads (Si) 0.02735*A JANSG2N7394
IRHM8054 1000K Rads (Si) 0.02735*A JANSH2N7394
TO-254AA
International Rectifier’s RADHard HEXFET® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
35*
30 A
140
150 W
1.2 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy Á
500
mJ
IAR Avalanche Current À
35 A
EAR
Repetitive Avalanche Energy À
15 mJ
dv/dt
Peak Diode Recovery dv/dt Â
3.5 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063 in.(1.6mm) from case for 10s)
oC
Weight
9.3 (Typical )
g
For footnotes refer to the last page
*Current is limited by package
www.irf.com
1
08/30/04

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IRHM3054 pdf, ピン配列
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PRraed-iIarrtaiodniaCtihoanracteristics
IRHM7054, JANSR2N7394
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to600KRads(Si)1 1000K Rads (Si)2 Units Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage
60
60 — V
VGS(th) Gate Threshold Voltage
2.0 4.0
1.25 4.5
IGSS
Gate-to-Source Leakage Forward — 100 — 100 nA
IGSS
Gate-to-Source Leakage Reverse
— -100
— -100
IDSS
Zero Gate Voltage Drain Current
— 25
— 50 µA
RDS(on) Static Drain-to-Source Ã
— 0.027 — 0.04
On-State Resistance (TO-3)
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 48V, VGS = 0V
VGS = 12V, ID = 30A
RDS(on) Static Drain-to-Source Ã
— 0.027 — 0.04
On-State Resistance (TO-254AA)
VGS = 12V, ID = 30A
VSD Diode Forward Voltage Ã
— 1.4 —
1.4 V
VGS = 0V, IS = 35A
1. Part numbers IRHM7054 ( JANSR2N7394 ), IRHM3054 ( JANSF2N7394 ), IRHM4054 ( JANSG2N7394 )
2. Part number IRHM8054 ( JANSH2N7394 )
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
Energy
MeV/(mg/cm2)) (MeV)
I 59.9
345
Br 36.8
305
Range
VDS(V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
32.8 60
60
45
40
30
39 40
35
30
25
20
80
60
40
20
0
0
-5 -10 -15 -20
VGS
BR
I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHM3054 電子部品, 半導体
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IRHM7054, JANSR2N7394
Pre-Irradiation
50
LIMITED BY PACKAGE
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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部品番号部品説明メーカ
IRHM3054

RADIATION HARDENED POWER MOSFET THRU-HOLE

International Rectifier
International Rectifier


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