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9926AのメーカーはFairchild Semiconductorです、この部品の機能は「FDW9926A」です。 |
部品番号 | 9926A |
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部品説明 | FDW9926A | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと9926Aダウンロード(pdfファイル)リンクがあります。 Total 5 pages
www.datasheet4u.com
March 2005
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 10V).
Applications
• Battery protection
• Load switch
• Power management
Features
• 4.5 A, 20 V.
RDS(ON) = 32 mΩ @ VGS = 4.5 V
RDS(ON) = 45 mΩ @ VGS = 2.5 V
• Optimized for use in battery circuit applications
• Extended VGSS range (±10V) for battery applications
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Total Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
9926A
FDW9926A
13’’
©2005 Fairchild Semiconductor Corporation
1
2
3
4
Ratings
20
±12
4.5
30
1.0
0.6
–55 to +150
125
208
Tape width
12mm
8
7
6
5
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDW9926A Rev E(W)
1 Page www.datasheet4u.com
Typical Characteristics
30
VGS = 10.0V
3.0V
25
4.5V
3.5V
2.5V
20
15
10 2.0V
5
0
0 0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
3
2.4
VGS = 2.0V
2.2
2
1.8
1.6
2.5V
1.4
1.2
1
0.8
0
5
3.0V
3.5V
4.0V
4.5V
10.0V
10 15 20
ID, DRAIN CURRENT (A)
25
30
Figure 2. On-Resistance Variation with
Drain Current and Gate voltage.
1.6
ID = 4.5A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
temperature.
0.09
ID = 2.25A
0.07
0.05
0.03
0.01
0
TA = 125oC
TA = 25oC
2468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
VDS = 5V
25
TA = -55oC
125oC
20
25oC
15
10
5
0
0.5
1 1.5 2 2.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
100
VGS = 0V
10
1
0.1
0.01
0.001
TA = 125oC
25oC
-55oC
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW9926A Rev. E(W)
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
9926A | FDW9926A | Fairchild Semiconductor |
9926A | Dual N-Channel MOSFET | Tuofeng Semiconductor |
9926B | Dual N-Channel MOSFET | Tuofeng Semiconductor |