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PDF IRFU6215PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFU6215PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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www.datasheet4u.com
l P-Channel
l 175°C Operating Temperature
l Surface Mount (IRFR6215)
l Straight Lead (IRFU6215)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
G
PD-95080A
IRFR6215PbF
IRFU6215PbF
HEXFET® Power MOSFET
D VDSS = -150V
RDS(on) = 0.295Ω
ID = -13A
S
D-PAK
TO-252AA
I-PAK
TO-251AA
Max.
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/14/04
1 page  
www.datasheet4u.com
14
12
10
8
6
4
2
0
25
50 75 100 125 150
TC, Case Temperature ( °C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFR/U6215PbF
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
PDM
Notes:
1. Duty factor D = t 1 / t 2
t1
t2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
A
1
5
5 Page 
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRFU6215PBF.PDF ] | |
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