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APM2509NUB の電気的特性と機能

APM2509NUBのメーカーはAnpec Electronics Coroprationです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 APM2509NUB
部品説明 N-Channel Enhancement Mode MOSFET
メーカ Anpec Electronics Coropration
ロゴ Anpec Electronics Coropration ロゴ 




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APM2509NUB Datasheet, APM2509NUB PDF,ピン配置, 機能
www.datasheet4u.com
APM2509NUB
N-Channel Enhancement Mode MOSFET
Features
25V/50A ,
RDS(ON)=7.5m(typ.) @ VGS=10V
RDS(ON)=13m(typ.) @ VGS=4.5V
Super High Dense Cell Design
Avalanche Rated
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Power Management in Desktop Computer or
DC/DC Converters
Pin Description
123
GDS
Top View of TO-251
D
G
Ordering and Marking Information
S
N-Channel MOSFET
APM2509N
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
UB : TO-251
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
PB : Plastic Bag
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2509N UB : APM2509N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
1
www.anpec.com.tw

1 Page





APM2509NUB pdf, ピン配列
www.datasheet4u.com
APM2509NUB
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM2509NUB
Unit
Min. Typ. Max.
Drain-Source Avalanche Ratings
EAS Avalanche Energy, Single Pulsed ID=15A, L=0.5mH
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VGS=0V, IDS=250µA
VDS=20V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=30A
VGS=4.5V, IDS=15A
25
1.3
Diode Characteristics
VSDa Diode Forward Voltage
trrb Reverse Recovery Time
Qrrb Reverse Recovery Charge
ISD=10A, VGS=0V
ISD=10A, dISD/dt =100A/µs
Dynamic Characteristics b
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
td(ON)
Tr
td(OFF)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=6
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V, VGS=4.5V,
IDS=30A
Notes:
a : Pulse test ; pulse width300µs, duty cycle2%.
b : Guaranteed by design, not subject to production testing.
50
1
30
1.8 2.5
±100
7.5 9
13 18
0.9 1.1
17
6
1.8
1560
345
245
17
18
41
16
17.5 26
5
11
mJ
V
µA
V
nA
m
V
ns
nC
pF
ns
nC
Copyright © ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
3
www.anpec.com.tw


3Pages


APM2509NUB 電子部品, 半導体
www.datasheet4u.com
APM2509NUB
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8
V = 10V
GS
1.6
I = 30A
DS
1.4
1.2
1.0
0.8
0.6
R @T =25oC: 7.5m
ON j
0.4
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
40
10
T =150oC
j
T =25oC
1j
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-Drain Voltage (V)
3000
2500
Capacitance
Frequency=1MHz
2000
1500
Ciss
1000
500
Crss
0
05
Coss
10 15 20 25
VDS - Drain - Source Voltage (V)
Gate Charge
10
V =15V
DS
9 I = 30A
D
8
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35
QG - Gate Charge (nC)
Copyright © ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
6
www.anpec.com.tw

6 Page



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部品番号部品説明メーカ
APM2509NU

N-Channel Enhancement Mode MOSFET

Anpec Electronics Coropration
Anpec Electronics Coropration
APM2509NUB

N-Channel Enhancement Mode MOSFET

Anpec Electronics Coropration
Anpec Electronics Coropration


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