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PDF IXFA14N60P Data sheet ( Hoja de datos )
| Número de pieza | IXFA14N60P | |
| Descripción | Polar MOSFETs | |
| Fabricantes | IXYS Corporation | |
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ADVANCE TECHNICAL INFORMATION
PolarHVwww.DataSheet4U.coTmM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
IXFA 14N60P
IXFP 14N60P
IXFH 14N60P
V
DSS
ID25
RDS(on)
= 600 V
= 14 A
≤ 550 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
V
DSS
VDGR
VGS
VGSM
ID25
IDM
IAR
E
AR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
Md
Weight
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Tranisent
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
= 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P,TO-220)
TO-247
TO-220
TO-263
600 V
600 V
G
±30 V
D
S
±40 V
TO-220 (IXTP)
14 A
42 A
14 A
23 mJ
0.9 J
G DS
10 V/ns TO-263 (IXTA)
(TAB)
(TAB)
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
250 °C
1.13/10 Nm/lb.in.
6g
4g
2g
G
S
(TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 4 mA
3.5 5.5 V
I
GSS
V
GS
=
±30
V,
DC
V
DS
=
0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
5 µA
50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
450 550 m Ω
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99329(02/05)
1 page  
www.DataSheet4U.com
1.00
IXFA 14N60P IXFP 14N60P
IXFH 14N60P
Fig. 13. MaximumTransient Thermal Resistance
0.10
0.01
0.1
1 10 100
PulseWidth- milliseconds
1000
© 2005 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXFA14N60P.PDF ] | |
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