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PDF IXFH16N50P Data sheet ( Hoja de datos )
| Número de pieza | IXFH16N50P | |
| Descripción | Polar MOSFETs | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
PolarHVTM
www.DataSheet4U.com
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
IXFA 16N50P
IXFP 16N50P
IXFH 16N50P
VDSS =
ID25 =
=RDS(on)
trr =
500 V
16 A
400 mΩ
200 ns
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
500 V
500 V
±30 V
±40 V
16 A
35 A
16 A
25 mJ
750 mJ
dv/dt
PD
TJ
TJM
Tstg
TL
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
10 V/ns
300
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
Md
Mounting torque (TO-247 & TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
TO-263
TO-247
4g
3g
5.5 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 1 mA
3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
5 µA
50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
400 mΩ
TO-220 (IXTP)
G DS
TO-263 (IXTA)
(TAB)
G
S
TO-247 (IXFH)
(TAB)
G
DS
D (TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99357A(03/05)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFH16N50P.PDF ] | |
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