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PDF IXFA10N60P Data sheet ( Hoja de datos )
| Número de pieza | IXFA10N60P | |
| Descripción | Polar MOSFETs | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
PolarHVTM HiPerFET
www.DataSheet4U.com
Power MOSFET
IXFA 10N60P
IXFP 10N60P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS =
ID25 =
RtrDrS(on)
≤
≤
600 V
10 A
740 mΩ
250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings TO-220 (IXFP)
600 V
600 V
± 30
± 40
10
25
10
18
500
10
V
V
A
A
A
mJ
mJ
V/ns
G DS
TO-263 (IXFA)
G
S
(TAB)
(TAB)
200
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
4g
3g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Fast Intrinsic Diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 1 mA
3.0 5.5 V
IGSS VGS = ± 30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
5 µA
150 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
740 mΩ
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99424(09/05)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFA10N60P.PDF ] | |
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