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PDF IXFA12N50P Data sheet ( Hoja de datos )
| Número de pieza | IXFA12N50P | |
| Descripción | Polar MOSFETs | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
IXFA 12N50P
IXFP 12N50P
PolarHVTM Power
MOSFETwww.DataSheet4U.com
IXFA 12N50P
IXFP 12N50P
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
trr ≤
500
12
0.5
200
V
A
Ω
ns
Symbol
VDSS
VDGR
VGSM
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Transient
Continuous
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings TO-263 (IXFA)
500 V
500 V
± 40
± 30
12
20
12
24
600
20
V
V
G
S
A
A
A
mJ
mJ
V/ns
TO-220 (IXFP)
G DS
(TAB)
(TAB)
200
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
4g
3g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 1 mA
IGSS VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.5 V
±100 nA
5 μA
150 μA
500 mΩ
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99436(09/05)
1 page  
www.DataSheet4U.com
1.00
Fig. 13. Maxim um Transient Therm al Resistance
IXFA 12N50P
IXFP 12N50P
0.10
0.01
0.01
0.1 1
10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved
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