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IRF3205ZSPbFのメーカーはInternational Rectifierです、この部品の機能は「AUTOMOTIVE MOSFET」です。 |
部品番号 | IRF3205ZSPbF |
| |
部品説明 | AUTOMOTIVE MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF3205ZSPbFダウンロード(pdfファイル)リンクがあります。 Total 13 pages
www.DataSheet4U.com
PD - 95129
AUTOMOTIVE MOSFET
IRF3205ZPbF
IRF3205ZSPbF
Features
l Advanced Process Technology
IRF3205ZLPbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 55V
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
G
RDS(on) = 6.5mΩ
S ID = 75A
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
IRF3205ZPbF
D2Pak
TO-262
IRF3205ZSPbF IRF3205ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
110
78
75
440
170
Units
A
W
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
1.1
± 20
180
250
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
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Typ.
–––
0.50
–––
–––
Max.
0.90
–––
62
40
Units
°C/W
1
3/18/04
1 Page www.DataSheet4U.com
IRF3205ZS/LPbF
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
1
0.1
4.5V 20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
0.1
4.5V 20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
10
1
4.0
VDS = 25V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
11.0
Fig 3. Typical Transfer Characteristics
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120
TJ = 175°C
100
80
60 TJ = 25°C
40
20
0
0
VDS = 10V
20µs PULSE WIDTH
20 40 60 80
ID, Drain-to-Source Current (A)
100
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3
3Pages www.DataSheet4U.com
IRF3205ZS/LPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
350
ID
300
TOP
27A
47A
BOTTOM 66A
250
200
150
100
50
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.0
ID = 250µA
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit
6
Fig 14. Threshold Voltage Vs. Temperature
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6 Page | |||
ページ | 合計 : 13 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF3205ZSPbF | AUTOMOTIVE MOSFET | International Rectifier |