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PDF IXTT110N10P Data sheet ( Hoja de datos )
| Número de pieza | IXTT110N10P | |
| Descripción | N-Channel Enhancement Mode | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Advance Technical Information
PolarHTwww.DataSheet4U.cToMm
Power MOSFET
IXTQ 110N10P
IXTT 110N10P
N-Channel Enhancement Mode
VDSS = 100
ID25
RDS(on)
=
=
110
15
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
Maximum Ratings
TO-3P (IXTQ)
100 V
100 V
±20 V
110 A G
75 A
250 A
DS
60 A
40 mJ TO-268 (IXTT)
1.0 J
(TAB)
10 V/ns
480 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
5.0 g
GS
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
100 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
15 mΩ
Advantages
z Easy to mount
z Space savings
z High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99132(05/04)
1 page  
www.DataSheet4U.com
1.00
IXTQ 110N10P
IXTT 110N10P
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
0.10
0.01
0.1
1 10 100
Pu ls e W id th - m illis e c o n d s
1000
© 2004 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTT110N10P.PDF ] | |
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