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PDF IXTP110N055P Data sheet ( Hoja de datos )
| Número de pieza | IXTP110N055P | |
| Descripción | PolarHT Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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PolarHTTM
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Power MOSFET
N-Channel Enhancement Mode
IXTQ 110N055P
IXTA 110N055P
IXTP 110N055P
VDSS = 55 V
ID25 = 110 A
RDS(on) = 13.5 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
V
DGR
VGS
VGSM
I
D25
I
DRMS
IDM
I
AR
E
AR
EAS
TJ = 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
MΩ
Continuous
Tranisent
T
C
= 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
T
C
= 25°C
TC = 25°C
55 V
55 V
±20 V
±30 V
110 A
75 A
250 A
110 A
30 mJ
1.0 J
dv/dt
PD
TJ
TJM
Tstg
TL
I
S
≤
I,
DM
di/dt
≤
100
A/μs,
V
DD
≤
V,
DSS
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
10 V/ns
330
-55 ... +175
175
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
Md Mounting torque (TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-220
TO-263
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 μA
5.5 g
4g
3g
Characteristic Values
Min. Typ. Max.
55 V
V
GS(th)
V
DS
=
V,
GS
I
D
=
250μA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 μA
250 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
11 13.5 mΩ
G
D
S
TO-220 (IXTP)
(TAB)
G DS
TO-263 (IXTA)
(TAB)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99182A(05/05)
1 page  
www.DataSheet4U.com
1.00
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Fig. 13. Maximum Transient Thermal Resistance
0.10
0.01
0.1
1 10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTP110N055P.PDF ] | |
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