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P6NC60FP の電気的特性と機能

P6NC60FPのメーカーはSTMicroelectronicsです、この部品の機能は「STP6NC60FP」です。


製品の詳細 ( Datasheet PDF )

部品番号 P6NC60FP
部品説明 STP6NC60FP
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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P6NC60FP Datasheet, P6NC60FP PDF,ピン配置, 機能
www.DataSheet4U.com
STP6NC60 - STP6NC60FP
STB6NC60-1
N-CHANNEL 600V - 1- 6A TO-220/TO-220FP/I2PAK
PowerMESH™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP(B)6NC60(-1) 600 V < 1.2
6A
STP6NC60FP
600 V < 1.2
6A
s TYPICAL RDS(on) = 1.0
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
TO-220
3
2
1
TO-220FP
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
May 2001
Value
STP(B)6NC60(-1) STP6NC60FP
600
600
±30
6 6(*)
3.8 3.8(*)
24 24(*)
125 40
1.0 0.32
3
- 2500
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
(1)ISD 6A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
1/10

1 Page





P6NC60FP pdf, ピン配列
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 300 V, ID = 3 A
RG = 4.7VGS = 10 V
(see test circuit, Figure 3)
VDD = 480V, ID = 6 A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 480V, ID = 6 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 6 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 6 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STP6NC60/FP/STB6NC60-1
Min.
Typ.
16
14
35
5.5
17.2
Max.
45.5
Unit
ns
ns
nC
nC
nC
Min.
Typ.
13
16
23
Max.
Unit
ns
ns
ns
Min.
Typ.
450
2.9
13
Max.
6
24
1.6
Unit
A
A
V
ns
µC
A
Safe Operating Area for TO-220/I2PAK
Safe Operating Area for TO-220FP
3/10


3Pages


P6NC60FP 電子部品, 半導体
STP6NC60/FP/STB6NC60-1
www.DataSheet4U.com
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10

6 Page



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部品番号部品説明メーカ
P6NC60FP

STP6NC60FP

STMicroelectronics
STMicroelectronics


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