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G30N60B3D の電気的特性と機能

G30N60B3DのメーカーはFairchild Semiconductorです、この部品の機能は「HGTG30N60B3D」です。


製品の詳細 ( Datasheet PDF )

部品番号 G30N60B3D
部品説明 HGTG30N60B3D
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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G30N60B3D Datasheet, G30N60B3D PDF,ピン配置, 機能
HGTG30N60B3D
www.DataSheet4U.com
Data Sheet
April 2004
60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49170. The diode used in anti-parallel
with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49172.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60B3D
TO-247
G30N60B3D
NOTE: When ordering, use the entire part number.
Packaging
JEDEC STYLE TO-247
E
C
G
Symbol
C
G
E
Features
• 60A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3D Rev. B2

1 Page





G30N60B3D pdf, ピン配列
HGTG30N60B3D
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
www.DataSheet4U.com
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC,
ICE = IC110,
VCE = 0.8 BVCES,
VGE = 15V,
RG = 3,
L = 1mH,
Test Circuit (Figure 19)
IEC = 30A
IEC = 1A, dIEC/dt = 200A/µs
IEC = 30A, dIEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
- 32
-
ns
- 24
-
ns
- 275 320 ns
-
90 150
ns
- 1300 1550 µJ
- 1600 1900 µJ
- 1.95 2.5
V
- 32 40 ns
- 45 55 ns
- - 0.6 oC/W
- - 1.3 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
60
VGE = 15V
50
40
30
20
10
0
25 50
75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
225 TJ = 150oC, RG = 3, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3D Rev. B2


3Pages


G30N60B3D 電子部品, 半導体
HGTG30N60B3D
Typical Performance Curves Unless Otherwise Specified (Continued)
www.DataSheet4U.com
10
8 CIES
FREQUENCY = 1MHz
6
4
2 COES
CRES
0
0 5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
100
0.50
0.20
10-1 0.10
0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
PD
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
t1
t2
101
200
175
150
125
100
75
50
25
0
0
25oC
100oC
-55oC
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VEC, FORWARD VOLTAGE (V)
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
50
TC = 25oC, dIEC/dt = 200A/µs
40 trr
30
ta
20
tb
10
0
12
5 10 20 30
IEC, FORWARD CURRENT (A)
FIGURE 18. RECOVERY TIME vs FORWARD CURRENT
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3D Rev. B2

6 Page



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部品番号部品説明メーカ
G30N60B3

HGTG30N60B3

Fairchild Semiconductor
Fairchild Semiconductor
G30N60B3D

HGTG30N60B3D

Fairchild Semiconductor
Fairchild Semiconductor


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