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P6NA60のメーカーはSTMicroelectronicsです、この部品の機能は「STP6NA60」です。 |
部品番号 | P6NA60 |
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部品説明 | STP6NA60 | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとP6NA60ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.DataSheet4U.com
STP6NA60
STP6NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STP6NA60
STP6NA60FI
VDSS
600 V
600 V
RDS(on)
< 1.2 Ω
< 1.2 Ω
ID
6.5 A
3.9 A
s TYPICAL RDS(on) = 1 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE GHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low RDS(on) and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1996
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Value
STP6NA60
STP6NA60FI
600
600
± 30
6.5 3.9
4.3 2.6
26 26
125 45
1 0.36
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
1 Page www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 300 V ID = 3 A
RG = 47 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID = 6 A
RG = 47 Ω
VGS = 10 V
(see test circuit, figure 5)
VDD = 480 V ID = 3 A VGS = 10 V
Min.
STP6NA60/FI
Typ.
35
90
Max.
50
125
Unit
ns
ns
200 A/µs
54 75 nC
8 nC
23 nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 6 A
RG = 47 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
80
20
115
Max.
110
30
155
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 6.5 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 6 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
6.5
26
Unit
A
A
1.6
600
9
30
V
ns
µC
A
Safe Operating Areas for TO-220
Safe Operating Areas for ISOWATT220
3/10
3Pages STP6NA60/FI
www.DataSheet4U.com
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/10
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ P6NA60 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
P6NA60 | STP6NA60 | STMicroelectronics |
P6NA60FI | STP6NA60FI | ST Microelectronics |
P6NA60FP | STP6NA60FP | STMicroelectronics |