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BTA06 の電気的特性と機能

BTA06のメーカーはSirectifier Semiconductorsです、この部品の機能は「Discrete Triacs」です。


製品の詳細 ( Datasheet PDF )

部品番号 BTA06
部品説明 Discrete Triacs
メーカ Sirectifier Semiconductors
ロゴ Sirectifier Semiconductors ロゴ 




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BTA06 Datasheet, BTA06 PDF,ピン配置, 機能
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BTB/BTA06
Discrete Triacs(Non-Isolated/Isolated)
G
T2
T1
T2
G
T1
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IT(RMS) RMS on-state current (full sine wave)
TO-22 0AB
Tc = 100 °C
6
A
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x I GT , tr <_ 100 ns
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
63
60
21
50
tp = 20 µs
Tj = 125°C
Tj = 125°C
4
1
- 40 to + 150
- 40 to + 125
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB
IGT (1)
VGT
VD = 12 V
RL = 30
I - II - III
I - II - III
VGD VD = VDRM RL = 3.3 kTj = 125°C I - II - III
IH (2)
IL
IT = 100 mA
IG = 1.2 IGT
I - III
II
dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C
(dI/dt)c (2) Without snubber
Tj = 125°C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
CW BW
35 50
1.3
0.2
35 50
50 70
60 80
400 1000
3.5 5.3
A
A²s
A/µs
A
W
°C
Unit
mA
V
V
mA
mA
V/µs
A/ms

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BTA06 pdf, ピン配列
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BTB/BTA06
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1: Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
P (W)
8
7
6
5
4
3
2
1 IT(R MS )(A)
0
0123456
F ig. :3 R elative variation of thermal impeda nce
versus pulse duration.
K =[Zth/R th]
1E +0
Zth(j-c)
F ig. : 2R MS on-state current vers us cas e
temperature (full cycle).
IT(R MS ) (A)
7
6
5
4
3
2
1
0
0 25
Tc(°C )
50 75
BTB
B TA
100 125
F ig. : 4On-s tate cha racteris tics (maximum
values ).
ITM (A)
100
Tj max.
V to = 0.8V5
R d = 60 m
T j=T j max
1E -1
Z th( j-a )
10
1E -2
1E -3
1E -2
tp(s )
1E -1 1E +0
1E +1
1E +2 5E +2
F ig. : 5 S urge peak on-state current vers us
number of cycles .
ITS M (A)
70
60
50
40
30
R epetitive
20 Tc=105°C
10
0
1
Non repetitive
T j initial=25°C
Number of yccles
10 100
t=20ms
One cycle
1000
V T M(V )
10.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
F ig. : 6Non-repetitive s urge pea k on-s tate
current for a s inus oidal puls e with width
tp < 10ms, and corres ponding value of I²t.
IT S M (A ),I²t (A ²s )
1000
T j initial=25°C
100
dI/dt limitation:
50A /µs
ITS M
100. 0 1
tp (ms )
0.10 1.00
I²t
10.00


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