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Datasheet SW65-0314 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SW65-0314 | GaAs SP4T Absorptive Switch
GaAs SP4T Absorptive Switch with ASIC Driver, DC - 3.0 GHz
SOW-24
V 6.00
SW65-0314
Features
n n n n n n n n
Typical Isolation: 33 dB (2,000 MHz) Typical Insertion Loss: 1.6 dB (2,000 MHz) Integral ASIC TTL/CMOS Driver Plastic, 50 mil Pitch, SOW-24 Lead, Wide Body Low DC Powe |  Tyco Electronics | data |
SW6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SW601Q | MOSFET, Transistor SAMWIN
SW601Q
Features
■ RDS(ON) (Max 700Ω)@VGS=0V,ID=3mA ■ High Switching Speed
General Description
N-channel SOT-23 MOSFET
SOT-23 3
1 2
BVDSS : 600V ID : 0.185A RDS(ON) : 700Ω
3
1. Source 2. Gate 3. Drain
2 1
The SW601Q is an N-channel power MOSFET using SAMWIN’s Advanced technolo  SEMIPOWER mosfet | | |
| 2 | SW60N06T | MOSFET, Transistor SAMWIN
SW60N06T
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max8mΩ)@VGS=10V ■ Gate Charge (Typical 77nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDM SEMIPOWER mosfet | | |
| 3 | SW6100 | BATTERY SHENZHEN SUNNYWAY BATTERY TECH CO.,LTD.
R
SW6100(6V10AH)
151 50
SW (1 2 1 2 1 0 0 V10 AH )
Nominal Voltage Rated capacity (20 hour rate) Total Height Height Dimensions Length Width Weight Approx
6V 10 Ah 100mm(3.94 inches) 94 mm(3.70 inches) 151 mm(5.94 inches) 50 mm(1.97 inc  SUNNYWAY battery | | |
| 4 | SW630 | N-Channel MOSFET SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W
SW630
This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better chara  Samwin mosfet | | |
| 5 | SW630A | MOSFET, Transistor SAMWIN
SW630A
N-channel TO-220/D-PAK MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.4 Ω)@VGS=10V ■ Gate Charge (Typ 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220
TO-252
12 3
1 2 3
BVDSS : 200V ID : 10A RDS(ON) : 0.4ohm
2
1. Gate 2. Drain 3. Source
General SEMIPOWER mosfet | | |
| 6 | SW634 | N-Channel MOSFET SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 250 V : 0.45 ohm : 8.5 A : 28 nc : 72 W
SW634
This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better char Samwin mosfet | | |
| 7 | SW640 | N-Channel MOSFET SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.18 ohm : 18A : 40 nc : 139 W
SW640
This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better ch Samwin mosfet | |
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| Número de pieza | Descripción | Fabricantes | |
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