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PDF K25T120 Data sheet ( 特性 )

部品番号 K25T120
部品説明 IKW25T120
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 

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K25T120 Datasheet, K25T120 PDF,ピン配置, 機能
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TrenchStop® Series
IKW25T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
Approx. 1.0V reduced VCE(sat)
and 0.5V reduced VF compared to BUP314D
Short circuit withstand time – 10µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
E
PG-TO-247-3-21
Type
VCE
IC VCE(sat),Tj=25°C
IKW25T120 1200V 25A
1.7V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Tj,max Marking Code
Package
150°C K25T120 PG-TO-247-3-21
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Value
1200
50
25
75
75
50
25
75
±20
10
190
-40...+150
-55...+150
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 May 06

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