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PDF IXFK48N60P Data sheet ( Hoja de datos )
| Número de pieza | IXFK48N60P | |
| Descripción | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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PolarHVwww.DataSheet4U.cToMm HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK 48N60P
IXFX 48N60P
VDSS
ID2
RDS(on)
trr
= 600 V
= 48 A
≤ 135mΩ
≤ 200 ns
Symbol
Test Conditions
TO-264 (IXFK)
Maximum Ratings
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
Md
Weight
TL
TSOLD
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 4 Ω
TC = 25° C
Mounting torque (TO-264)
TO-264
PLUS247
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
600 V
600 V
±30 V
±40 V
48 A
110 A
48 A
70 mJ
2.0 J
20 V/ns
830 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
6g
300 ° C
260 ° C
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 8 mA
3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
25 µA
1000 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
135 m Ω
G
D
S
(TAB)
PLUS247 (IXFX)
(TAB)
G = Gate D = Drain
S = Source Tab = Drain
Features
l International standard packages
l Fast recovery diode
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99375E(02/06)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFK48N60P.PDF ] | |
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