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PDF ISA1235AC1 Data sheet ( Hoja de datos )
| Número de pieza | ISA1235AC1 | |
| Descripción | SMALL-SIGNAL TRANSISTOR | |
| Fabricantes | Isahaya Electronics | |
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〈SMALL-SIGNAL TRANSISTOR〉
ISA1235AC1 ISA1602AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1235AC1 ISA1602AM1 is super mini
package resin sealed silicon PNP epitaxial type
transistor.
These are designed for low frequency voltage
amplify application .
OUTLINE DRAWING
UNIT：mm
ISA1235AC1
ISA1602AM1
2.5
0.5 1.5 0.5
2.1
0.425 1.2 0.425
FEATURE
・Excellent linearity of DC forward current gain.
①
②③
①
②③
・Small collector to emitter saturation voltage
VCE(sat)=-0.3Vmax
APPLICATION
For small type machine low frequency voltage
amplify application.
0～0.1
MAXIMUM RATINGS（Ta=25℃）
JEITA：SC-59
JEDEC：TO-236 resemblance
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
Symbol
ＶＣＢＯ
ＶＥＢＯ
ＶＣＥＯ
ＩＣ
ＰＣ
Ｔｊ
Ｔｓｔｇ
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
ISA1235AC1 ISA1602AM1
-60
-6
-50
-200
200
+150
-55～+150
UNIT
V
V
V
mA
mW
℃
℃
0～0.1
JEITA：SC-70
JEDEC：－
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
MARKING
. MF
hFE ITEM
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Parameter
Ｖ（ＢＲ）ＣＥＯ
Ｉ ＣＢＯ
Ｉ EＢＯ
ｈＦＥ*
ｈＦＥ
ＶＣＥ（ｓａｔ）
ｆＴ
Cob
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain bandwidth product
Collector output capacitance
NF Noise Figure
Test conditions
I C=-100μA，RBE=∞
VCB=-60V，I E =0
VEB=-6V，I C =0
VCE=-6V，I C =-1mA
VCE=-6V，I C =-0.1mA
I C =-100mA，I B =-10mA
VCE=-6V，I E =10mA
VCB=-6V，I E =0,f=1MHz
VCE=-6V，I E =0.3mA，
f=100Hz，RG=10kΩ
*：It shows hFE classification in below table.
Min
Limits
Ave
Max
UNIT
-50 V
-0.1 μA
-0.1 μA
150 500 －
90 －
-0.3 V
200 MHz
4.0 pF
20 dB
EF
ｈFE 150～300 250～500
ISAHAYA ELECTRONICS CORPORATION
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