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PDF IRFU3607PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFU3607PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
G
PD - 97312
IRFR3607PbF
IRFU3607PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
S ID (Package Limited)
75V
7.34mΩ
9.0mΩ
80Ac
56A
D
S
G
S
D
G
D-Pak
I-Pak
IRFR3607PbF IRFU3607PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy e
IAR Avalanche Current d
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case k
RθJA Junction-to-Ambient j
RθJA Junction-to-Ambient (PCB Mount) jk
Max.
80c
56c
56
310
140
0.96
± 20
27
-55 to + 175
300
120
46
14
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
03/04/08
1 page  
IRFR/U3607PbF
10.00
www.DataSheet4U.com
1.00
D = 0.50
0.10
0.01
0.00
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τCτ
Ri (°C/W)
0.01109
0.26925
τi (sec)
0.000003
0.000130
τ4τ4 0.49731 0.001301
Ci= τi/Ri
Ci i/Ri
0.26766 0.008693
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
100
0.01
10 0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-01
150
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
BOTTOM 1.0% Duty Cycle
1. Avalanche failures assumption:
125 ID = 46A
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
100
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
75 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
50 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
25 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com
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| PDF Descargar | [ Datasheet IRFU3607PBF.PDF ] | |
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