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IRFS31N20DPBF の電気的特性と機能

IRFS31N20DPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFS31N20DPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFS31N20DPBF Datasheet, IRFS31N20DPBF PDF,ピン配置, 機能
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PD - 94946
SMPS MOSFET
Applications
l High Frequency DC-DC converters
l Lead-Free
VDSS
200V
IRFB31N20DPbF
IRFS31N20DPbF
IRFSL31N20DPbF
HEXFET® Power MOSFET
RDS(on) max
0.082
ID
31A
Benefits
l Low Gate to Drain to Reduce Switching
Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design,(See
AN 1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
D2Pak
TO-262
IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
31
21
124
3.1
200
1.3
± 30
2.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies
l Telecom 48V Input DC/DC Active Clamp Reset Forward Converter
Notes  through † are on page 11
www.irf.com
1
3/1/04

1 Page





IRFS31N20DPBF pdf, ピン配列
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IRFB/S/SL31N20DPbF
1000
100
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
10
1
0.1
0.1
5.5V
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
10
5.5V
20µs PULSE WIDTH
1 TJ = 175 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 175° C
10
TJ = 25° C
1
0.1
5
V DS= 50V
20µs PULSE WIDTH
6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
11
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 30A
2.5
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFS31N20DPBF 電子部品, 半導体
www.DataSheet4U.com
IRFB/S/SL31N20DPbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
1000
800
TOP
BOTTOM
ID
7.3A
15A
18A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFS31N20DPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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