DataSheet.jp

IS62WV20488ALL の電気的特性と機能

IS62WV20488ALLのメーカーはIntegrated Silicon Solutionです、この部品の機能は「2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS62WV20488ALL
部品説明 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
メーカ Integrated Silicon Solution
ロゴ Integrated Silicon Solution ロゴ 




このページの下部にプレビューとIS62WV20488ALLダウンロード(pdfファイル)リンクがあります。

Total 16 pages

No Preview Available !

IS62WV20488ALL Datasheet, IS62WV20488ALL PDF,ピン配置, 機能
IS62WV20488ALL
IS62WV20488BLL
2M x 8 HIGH-SPEED LOW POWER
www.DataSheet4U.com
CMOS STATIC RAM
ISSI®
PRELIMINARY INFORMATION
JULY 2006
FEATURES
• High-speed access times:
25, 35 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
– VDD 1.65V to 2.2V (IS62WV20488ALL)
speed = 35ns for Vcc = 1.65V to 2.2V
– VDD 2.4V to 3.6V (IS62WV20488BLL)
speed = 25ns for Vcc = 2.4V to 3.6V
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 44-pin TSOP (Type II)
• Industrial Temperature Support
• Lead-free available
DESCRIPTION
The ISSI IS62WV20488ALL/BLL is a high-speed, low
power, 2M-word by 8-bit CMOS static RAM. The
IS62WV20488ALL/BLL is fabricated using ISSI's high-
performance CMOS technology. This highly reliable
process coupled with innovative circuit design tech-
niques, yields higher performance and low power con-
sumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
The IS62WV20488ALL/BLL operates from a single
power supply and all inputs are TTL-compatible.
The IS62WV20488ALL/BLL is available in 48 ball mini
BGA and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A20
VDD
GND
I/O0-I/O7
DECODER
2M X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE
WE
CONTROL
CIRCUIT
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
06/21/06
1

1 Page





IS62WV20488ALL pdf, ピン配列
IS62WV20488ALL
IS62WV20488BLL
TwRwwU.DTaHtaShTeeAt4BU.LcoEm
Mode
WE
Not Selected X
(Power-down) X
Output Disabled H
Read
H
Write
L
CS1
H
X
L
L
L
CS2
X
L
H
H
H
OE
X
X
H
L
X
I/O Operation VDD Current
High-Z
ISB1, ISB2
High-Z
DOUT
DIN
ICC
ICC
ICC
ISSI ®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND –0.5 to VDD + 0.5 V
VDD VDD Relates to GND
–0.3 to 4.0
V
TSTG
Storage Temperature
–65 to +150
°C
PT Power Dissipation
1.0 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter
Conditions
Max.
Unit
CIN Input Capacitance
VIN = 0V
6 pF
CI/O
Input/Output Capacitance
VOUT = 0V
8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
06/21/06
3


3Pages


IS62WV20488ALL 電子部品, 半導体
IS62WV20488ALL
IS62WV20488BLL
ISSI ®
www.DataSheet4U.com
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
Test Conditions
ICC VDD Dynamic Operating VDD = Max.,
Com.
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
typ.(2)
ICC1 Operating
Supply Current
VDD = Max.,
IOUT = 0 mA, f = 0
Com.
Ind.
ISB1 TTL Standby Current VDD = Max.,
Com.
(TTL Inputs)
VIN = VIH or VIL
Ind.
CS1 VIH, f = 0, CS2 = VIL
ISB2 CMOS Standby
VDD = Max.,
Com.
Current (CMOS Inputs) CS1 VDD – 0.2V,
Ind.
CS2 0.2V,
typ.(2)
VIN VDD – 0.2V, or
VIN 0.2V, f = 0
-25
Min. Max.
— 30
— 35
15
— 10
— 15
— 10
— 12
— 1.5
— 1.5
0.8
-35
Min. Max.
— 25
— 30
— 10
— 15
— 10
— 12
— 1.5
— 1.5
Unit
mA
mA
mA
mA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.
6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
06/21/06

6 Page



ページ 合計 : 16 ページ
 
PDF
ダウンロード
[ IS62WV20488ALL データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IS62WV20488ALL

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

Integrated Silicon Solution
Integrated Silicon Solution


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap