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Número de pieza | 60NF06 | |
Descripción | N-Channel MOSFET Transistor | |
Fabricantes | Inchange | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 60NF06 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
wiswwc.DaNtaS-hCeeht4Ua.cnomnel MOSFET Transistor
isc Product Specification
60NF06
FEATURES
·Drain Current –ID=60A@ TC=25℃
·Drain Source Voltage-
: VDSS= 60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.016Ω(Max)
·Fast Switching
DESCRIPTION
Suitable as primary switch in advanced high-efficiency isolated
DC-DC converters for Telecom and Computer application. It is
also intended for any application with low gate charge drive
requirements .
APPLICATIONS
·High-efficiency DC-DC converters
·UPS and motor control
·Automotive
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
60
±20
V
V
ID Drain Current-Continuous
60 A
IDM Drain Current-Single Pluse (tp≤10μs)
240
A
PD Total Dissipation @TC=25℃
110 W
TJ Max. Operating Junction Temperature
175 ℃
Tstg Storage Temperature
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.36
62.5
UNIT
℃/W
℃/W
isc Website:www.iscsemi.cn
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 60NF06.PDF ] |
Número de pieza | Descripción | Fabricantes |
60NF06 | N-Channel MOSFET Transistor | Inchange |
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