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PDF GB14C40L Data sheet ( Hoja de datos )
| Número de pieza | GB14C40L | |
| Descripción | IRGB14C40L | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 93891A
IRGS14C40L
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Ignition IGBT
IRGSL14C40L
IRGB14C40L
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features
Most Rugged in Industry
Logic-Level Gate Drive
> 6KV ESD Gate Protection
Low Saturation Voltage
High Self-clamped Inductive Switching Energy
TERMINAL DIAGRAM
Collector
Gate
R1
R2
BVCES = 370V min, 430V max
IC @ TC = 110°C = 14A
VCE(on) typ= 1.2V @7A @25°C
IL(min)=11.5A @25°C,L=4.7mH
Description
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
Gate-Collector which provide over voltage
protection capability in ignition circuits.
Emitter
JEDEC TO-263AB JEDEC TO-262AA
JEDEC TO-220AB
IRGS14C40L IRGSL14C40L IRGB14C40L
NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.
Absolute Maximum Ratings
Parameter
Max Unit
Condition
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 110°C Continuous Collector Current
IG Continuous Gate Current
IGp Peak Gate Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ T = 110°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
VESD
Electrostatic Voltage
IL Self-clamped Inductive Switching Current
Clamped
20
V RG = 1K ohm
A VGE = 5V
14 A VGE = 5V
1 mA
10 mA tPK = 1ms, f = 100Hz
Clamped V
125 W
54 W
- 40 to 175 °C
- 40 to 175 °C
6 KV C = 100pF, R = 1.5K ohm
11.5 A L = 4.7mH, T = 25°C
Thermal Resistance
Parameter
Min Typ
Max
Unit
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.2
40 °C/W
(PCB Mounted, Steady State)
ZθJC
Transient Thermal Impedance, Juction-to-Case (Fig.11)
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Page 1
4/7/2000
1 page  
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Ignition IGBT
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Fig.9 - Self-clamp Avalance Current vs
Inductance @ 25°C
40
35
30
25 Typical
20
15 Minimum
10
0
1234
Inductance (mH)
5
Fig.10 - Self-clamp Avalance Current
vs Inductance @ 150°C
20
18
16
14
12 Typical
10
8 Minimum
6
4
0 2 4 6 8 10
Inductance (mH)
Fig.11 - Transient Thermal Impedance, Junction-to-Case
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
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PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1/ t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Page 5
4/7/2000
5 Page 
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Ignition IGBT
IRGS14C40L
IRGSL14C40L
IRGB14C40L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.54 (.415)
10.29 (.405)
4
3.78 (.149)
3.54 (.139)
-A-
6.47 (.255)
6.10 (.240)
1 23
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
4.69 (.185)
4.20 (.165)
-B-
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
3X
0.93 (.037)
0.69 (.027)
0.36 (.014) M B A M
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
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Page 11
4/7/2000
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet GB14C40L.PDF ] | |
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