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PDF 16N50C3 Data sheet ( Hoja de datos )
| Número de pieza | 16N50C3 | |
| Descripción | SPP16N50C3 | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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 1. - 560V, MOSFET - SPP16N50C3  Hay una vista previa y un enlace de descarga de 16N50C3 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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SPP16N50C3
SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
560
0.28
16
V
Ω
A
• Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
• Extreme dv/dt rated
2
• Ultra low effective capacitances
• Improved transconductance
P-TO220-3-31
3
12
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type
SPP16N50C3
SPI16N50C3
SPA16N50C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4583
Q67040-S4582
SP000216351
Marking
16N50C3
16N50C3
16N50C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=8, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=16A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 6)
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
16 161)
10 101)
48 48
460 460
0.64 0.64
16 16
±20 ±20
±30 ±30
160 34
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3.2
page 1
2009-12-22
1 page  
1 Power dissipation
Ptot = f (TC)
170 SPP16N50C3
W
140
120
100
80
60
40
20
00 20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
SPP16N50C3
SPI16N50C3, SPA16N50C3
2 Power dissipation FullPAK
Ptot = f (TC)
36
W
28
24
20
16
12
8
4
00 20 40 60 80 100 120 °C 160
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 2
A
10 1
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10 -1
tp = 1 ms
DC
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
10 -1
tp = 10 ms
DC
10
-2
10
0
10 1
10 2 V 10 3
10
-2
10
0
10 1
10 2 V 10 3
VDS
VDS
Rev. 3.2
page 5
2009-12-22
5 Page 
PG-TO220-3-1, PG-TO220-3-21
SPP16N50C3
SPI16N50C3, SPA16N50C3
Rev. 3.2
page 11
2009-12-22
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet 16N50C3.PDF ] | |
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