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1803DFX の電気的特性と機能

1803DFXのメーカーはSTMicroelectronicsです、この部品の機能は「 MD1803DFX」です。


製品の詳細 ( Datasheet PDF )

部品番号 1803DFX
部品説明 MD1803DFX
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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1803DFX Datasheet, 1803DFX PDF,ピン配置, 機能
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MD1803DFX
High voltage NPN Power transistor for standard definition CRT
display
Features
State-of-the-art technology:
– Diffused collector “enhanced generation”
More stable performance versus operating
temperature variation
Low base drive requirement
Tighter hFE range at operating collector current
Fully insulated power package U.L. compliant
Integrated free wheeling diode
In compliance with the 2002/93/EC european
directive
Applications
Horizontal deflection output for TV
Description
The MD1803DFX is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
bringing updated performance to the Horizontal
Deflection stage.
3
2
1
ISOWATT218FX
Internal schematic diagram
RBE=60typ.
Order codes
Part number
MD1803DFX
Marking
MD1803DFX
Package
ISOWATT218FX
Packing
TUBE
September 2006
Rev 6
1/10
www.st.com
10

1 Page





1803DFX pdf, ピン配列
MD1803DFX
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2 Electrical characteristics
Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test conditions
Min.
ICES
Collector cut-off current
(VBE = 0)
VCE = 1500V
VCE = 1500V
Tc= 125°C
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5V
V(BR)EBO
Emitter-base breakdown voltage
(IC = 0)
IE = 700 mA
VCE(sat) Collector-emitter saturation
Note 1 voltage
IC = 5 A
IB = 1.25 A
VBE(sat)
Note 1
Base-emitter saturation voltage
IC = 5 A
IB = 1.25 A
hFE DC current gain
Note 1
IC = 1 A
IC = 5 A
IC = 5 A
VCE = 5 V
VCE = 1 V
VCE = 5 V
Vf Diode forward voltage
IF= 5 A
Inductive load
ts Storage time
tf Fall time
IC = 4A ___ _ _
IB(on) = 0.6A__
LBB(off) = 4.5µH
fh = 16KHz
VBE(off) = -2.7V
1 Pulsed duration = 300 µs, duty cycle 1.5%.
40
10
5.5
Typ.
18
5
2.5
0.3
Max.
0.2
2
120
2
1.2
7.5
1.6
3
0.6
Unit
mA
mA
mA
V
V
V
V
µs
µs
3/10


3Pages


1803DFX 電子部品, 半導体
Electrical characteristics
www.DataSheet4U.com
2.2 Test circuit
Figure 11. Power losses and inductive load switching test circuit
MD1803DFX
Figure 12. Reverse biased safe operating area test circuit
6/10

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
1803DFH

ST1803DFH

ST Microelectronics
ST Microelectronics
1803DFX

MD1803DFX

STMicroelectronics
STMicroelectronics


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