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PDF EN29LV160J Data sheet ( Hoja de datos )
| Número de pieza | EN29LV160J | |
| Descripción | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory | |
| Fabricantes | Eon Silicon Solution | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EN29LV160J (archivo pdf) en la parte inferior de esta página. Total 44 Páginas | ||
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EN29LV160J
www.DatE1a0S6Nh.eMe2t49eUL.gcoVamb1i6t0(J20**4*8*K**PxR8-EbLitIM/ 1IN02A4RKYxD1R6-AbFitT) *F*l*a*s*h* Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
• 3.0V, single power supply operation
- Minimizes system level power requirements
• Manufactured on 0.28 µm process technology
• High performance
- Access times as fast as 70 ns
• Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 µA typical standby current (standard access
time to active mode)
• Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword
and thirty-one 32 Kword sectors (word mode)
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
• High performance program/erase speed
- Byte program time: 8µs typical
- Sector erase time: 200ms typical
- Chip erase time: 3.5s typical
• JEDEC Standard program and erase
commands
• JEDEC standard DATA polling and toggle
bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
• 0.28 µm double-metal double-poly
triple-well CMOS Flash Technology
• Low Vcc write inhibit < 2.5V
• >100K program/erase endurance cycle
• 48-pin TSOP (Type 1)
• Commercial Temperature Range
GENERAL DESCRIPTION
The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10µs.
The EN29LV160J features 3.0V voltage read and write operation, with access times as fast as 55ns
to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV160J has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each Sector.
4800 Great America Parkway, Suite 202
1
Santa Clara, CA 95054
Rev 0.3 Release Date: 2002/01/30
Tel: 408-235-8680
Fax: 408-235-8685
1 page  
www.DataSheet4U.com
EN29LV160J
4800 Great America Parkway, Suite 202
5
Santa Clara, CA 95054
Rev 0.3 Release Date: 2002/01/30
Tel: 408-235-8680
Fax: 408-235-8685
5 Page 
28h
29h
www.DataSh2eAeth4U.com
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
EN29LV160J
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
001Eh
0000h
0000h
0001h
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2^N
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification of CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Adresses
(Word Mode)
40h
41h
42h
43h
44h
45h
46h
47h
48h
49h
4Ah
4Bh
4Ch
Table 8. Primary Vendor-specific Extended Query
Addresses
(Byte Mode) Data
Description
80h 0050h
82h 0052h Query-unique ASCII string “PRI”
84h 0049h
86h 0031h Major version number, ASCII
88h 0030h Minor version number, ASCII
8Ah
0000h
Address Sensitive Unlock
0 = Required, 1 = Not Required
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
92h 0004h 01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
94h
0000h
Simultaneous Operation
00 = Not Supported, 01 = Supported
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4800 Great America Parkway, Suite 202
11
Santa Clara, CA 95054
Rev 0.3 Release Date: 2002/01/30
Tel: 408-235-8680
Fax: 408-235-8685
11 Page | ||
| Páginas | Total 44 Páginas | |
| PDF Descargar | [ Datasheet EN29LV160J.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EN29LV160 | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory | Eon Silicon Solution |
| EN29LV160A | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory | Eon Silicon Solution |
| EN29LV160B | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory | Eon Silicon Solution |
| EN29LV160J | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory | Eon Silicon Solution |
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