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53NC50 の電気的特性と機能

53NC50のメーカーはSTMicroelectronicsです、この部品の機能は「 STE53NC50」です。


製品の詳細 ( Datasheet PDF )

部品番号 53NC50
部品説明 STE53NC50
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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53NC50 Datasheet, 53NC50 PDF,ピン配置, 機能
www.DataSheet4U.com
STE53NC50
N-CHANNEL 500V - 0.070- 53A ISOTOP
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STE53NC50
500V
< 0.08
53 A
n TYPICAL RDS(on) = 0.07
n EXTREMELY HIGH dv/dt CAPABILITY
n 100% AVALANCHE TESTED
n NEW HIGH VOLTAGE BENCHMARK
n GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITH MODE POWER SUPPLIES (SMPS)
n DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (AC-RMS)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2002
Value
500
500
±30
53
33
212
460
3.68
3
2500
– 65 to 150
150
(1) ISD53A, di/dt100 A/µs, VDD24V, TjTjMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/8

1 Page





53NC50 pdf, ピン配列
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 26.5A
RG = 4.7VGS = 10V
(see test circuit, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
VDD = 400V, ID = 53A,
VGS = 10V
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 400V, ID = 53A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 53A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 53A, di/dt = 100A/µs,
VDD = 70V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STE53NC50
Min.
Typ.
46
70
310
46
150
Max.
434
Unit
ns
ns
nC
nC
nC
Min.
Typ.
45
38
85
Max.
Unit
ns
ns
ns
Min.
Typ.
760
17.86
47
Max.
53
212
1.6
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedence
3/8


3Pages


53NC50 電子部品, 半導体
STE53NC50
www.DataSheet4U.com
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

6 Page



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部品番号部品説明メーカ
53NC50

STE53NC50

STMicroelectronics
STMicroelectronics


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