|
|
AP02N60IのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP02N60I |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP02N60Iダウンロード(pdfファイル)リンクがあります。 Total 6 pages
www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP02N60I
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
G
D
Description
S
The TO-220CFM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits.
BVDSS
RDS(ON)
ID
600V
8Ω
2A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
600
± 30
2
1.26
3.6
22
0.176
80
2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Max.
Max.
Value
5.7
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200117032
1 Page www.DataSheet4U.com
AP02N60I
1.5
T C =25 o C
1
10V
6.0V
5.5V
5.0V
0.5
V GS =4.5V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.8 T C =150 o C
0.6
0.4
0.2
10V
6.0V
5.5V
5.0V
V GS =4.5V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
2.8
I D =1A
2.4 V GS =10V
2
1.6
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C )
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3Pages www.DataSheet4U.com
AP02N60I
RD
D
VDS
TO THE
OSCILLOSCOPE
RG G
0.5x RATED VDS
+
10 V
-
S
VGS
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VDS
D
TO THE
OSCILLOSCOPE
0.8 x RATED VDS
G
S VGS
+
1~ 3 mA
-
II
GD
VG
10V
QGS
QG
QGD
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ AP02N60I データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP02N60H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP02N60H-H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP02N60H-H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP02N60H-H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |