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AP02N60I の電気的特性と機能

AP02N60IのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP02N60I
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP02N60I Datasheet, AP02N60I PDF,ピン配置, 機能
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Advanced Power
Electronics Corp.
AP02N60I
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
G
D
Description
S
The TO-220CFM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits.
BVDSS
RDS(ON)
ID
600V
8Ω
2A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
600
± 30
2
1.26
3.6
22
0.176
80
2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Max.
Max.
Value
5.7
62
Unit
/W
/W
Data & specifications subject to change without notice
200117032

1 Page





AP02N60I pdf, ピン配列
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AP02N60I
1.5
T C =25 o C
1
10V
6.0V
5.5V
5.0V
0.5
V GS =4.5V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.8 T C =150 o C
0.6
0.4
0.2
10V
6.0V
5.5V
5.0V
V GS =4.5V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
2.8
I D =1A
2.4 V GS =10V
2
1.6
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C )
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature


3Pages


AP02N60I 電子部品, 半導体
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AP02N60I
RD
D
VDS
TO THE
OSCILLOSCOPE
RG G
0.5x RATED VDS
+
10 V
-
S
VGS
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VDS
D
TO THE
OSCILLOSCOPE
0.8 x RATED VDS
G
S VGS
+
1~ 3 mA
-
II
GD
VG
10V
QGS
QG
QGD
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform

6 Page



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共有リンク

Link :


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