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PDF K1516 Data sheet ( Hoja de datos )
| Número de pieza | K1516 | |
| Descripción | MOSFET ( Transistor ) - 2SK1516 | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K1516 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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To all our customers
www.DataSheet4U.com
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain towswowu.DrcaetaSheet42US.cKo1m515 V(BR)DSS
breakdown voltage 2SK1516
450
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1515 IDSS
drain current
2SK1516
—
—
Gate to source cutoff voltage VGS(off)
Static Drain to source 2SK1515 RDS(on)
on state resistance 2SK1516
2.0
—
—
Forward transfer admittance |yfs|
4.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
—
—
—
—
—
Body to drain diode reverse
recovery time
t rr
—
Note: 1. Pulse test
Typ Max
——
——
— ±10
— 250
—
0.6
0.7
7.0
1100
310
50
15
65
95
55
1.0
3.0
0.8
0.9
—
—
—
—
—
—
—
—
—
120 —
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
2SK1515, 2SK1516
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A, VGS = 10 V *1
ID = 5 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 5 A, VGS = 10 V,
RL = 6 Ω
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF/dt = 100 A/µs
3
5 Page 
2SK1515, 2SK1516
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copywrwigwh.Dt,attraaSdheemeta4rUk.,coomr other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor Hitachi Europe GmbH
(America) Inc.
Electronic Components Group
179 East Tasman Drive, Dornacher Straβe 3
San Jose,CA 95134
D-85622 Feldkirchen, Munich
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
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URL : http://www.hitachi.com.sg
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Electronic Components Group.
(Taipei Branch Office)
Whitebrook Park
4/F, No. 167, Tun Hwa North Road,
Lower Cookham Road
Hung-Kuo Building,
Maidenhead
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom Tel : <886>-(2)-2718-3666
Tel: <44> (1628) 585000
Fax : <886>-(2)-2718-8180
Fax: <44> (1628) 585160
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
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Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
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Hong Kong
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URL : http://www.hitachi.com.hk
Copyright © Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet K1516.PDF ] | |
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