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PDF IXFK102N30P Data sheet ( Hoja de datos )

Número de pieza IXFK102N30P
Descripción Polar MOSFETs
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXFK102N30P Hoja de datos, Descripción, Manual

Advanced Technical Information
PolarHTTM
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HiPerFET
IXFK 102N30P
Power MOSFET
IXFN 102N30P
N-Channel Enhancement Mode
Fast Intrinsic Diode
V = 300 V
DSS
ID25 = 102 A
=RDS(on) 33 m
trr 200 ns
Symbol
Test Conditions
Maximum Ratings TO-264(SP) (IXFK)
V
DSS
VDGR
VGS
VGSM
ID25
I
D(RMS)
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
TJM
T
stg
T
L
Md
Weight
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-264
SOT-227B
300 V
300 V
±20 V
±30 V
102 A
75 A
250 A
60 A
60 mJ
2.5 J
10 V/ns
700 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
10 g
30 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
300 V
V
GS(th)
V = V , I = 4 mA
DS GS D
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
33 m
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
G = Gate
S = Source
D
D = Drain
S
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99221A(02/05)

1 page




IXFK102N30P pdf
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1.00
0.10
0.01
1
Fig. 13. Maxim um Transient Therm al Resistance
IXFK 102N30P
IXFN 102N30P
10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved

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