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PDF 2SK3716 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3716 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3716
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3716 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
• Low Ciss: Ciss = 2700 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3716
TO-251 (MP-3)
2SK3716-Z
TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAS
EAS
40
±20
±60
±240
84
1.0
150
–55 to +150
32
100
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, Tch(peak) ≤ 150°C
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16538EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2003
1 page  
2SK3716
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
www.DataCSHheAeNt4NUE.LcoTmEMPERATURE
16
ID = 30 A
14 Pulsed
VGS = 4 V
12
4.5 V
10
10 V
8
6
4
2
0
-100
-50 0 50 100 150 200
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
Ciss
1000
Coss
100
0.1
Crss
1 10 100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
VDD = 20 V
VGS = 10 V
RG = 0 Ω
100
tf
10
td(off)
tr
td(on)
1
0.1 1
10 100
ID - Drain Current - A
50
45
40
35
30
25
20
15
10
5
0
0
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
10
VDD = 32 V
20 V
8V
9
8
7
6
5
VGS
4
3
VDS
ID = 60 A 2
Pulsed 1
0
10 20 30 40 50
QG - Gate Charge - nC
1000
100
10
1
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = 10 V
4.5 V
0V
0.1
Pulsed
0.01
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/µs
VGS = 0 V
10
0.1
1 10 100
IF - Diode Forward Current - A
Data Sheet D16538EJ2V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SK3716.PDF ] | |
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