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PDF IRFY130CM Data sheet ( Hoja de datos )
| Número de pieza | IRFY130CM | |
| Descripción | POWER MOSFET N-CHANNE | |
| Fabricantes | International Rectifier | |
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Provisional Data Sheet No. PD 9.1286C
www.DataSheet4U.com
HEXFET® POWER MOSFET
IRFY130CM
N-CHANNEL
100 Volt, 0.18Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
Product Summary
Part Number
IRFY130CM
BVDSS
100V
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability.They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
Features
n Hermetically sealed
n Electrically isolated
n Simple drive requirements
n Ease of paralleling
n Ceramic eyelets
RDS(on)
0.18Ω
ID
14.4A
Absolute Maximum Ratings
Parameter
IRFY130CM
ID @ VGS=10V, TC = 25°C
ID @ VGS=10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
Tstg
Continuous Drain Current
14.4
Continuous Drain Current
9.1
Pulsed Drain Current
57.6
Max. Power Dissipation
75
Linear Derating Factor
0.6
Gate-to-SourceVoltage
±20
Single Pulse Avalance Energy
69
Avalance Current
14.4
Repetitive Avalanche Energy
7.5
Peak Diode Recover y dv/dt
5.5
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in (1.6mm) from case for 10 sec)
Weight
4.3(typical)
Units
A
W
W/K
V
mJ
A
mJ
V/ns
°C
g
*ID current limited by pin diameter
1 page  
IRFY130CM Device
10
www.DataSheet4U.com
1 D = 0.5 0
0 .20
0 .10
0.1 0.05
0.02
0 .01
SING LE PUL SE
(THE RMAL RESPO NS E)
0.01
0.00001
0.0001
0.001
0.01
0.1
A
1
t1 , Re c ta n g u la r P u ls e Du ra tio n (se c)
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
VDS L
D R IVE R
R G D .U .T
IAS
tp 0.01Ω
+
-
VD D
A
Fig. 12a — Unclamped Inductive Test Circuit
30C
80
V (B R)DSS
tp
I AS
Fig. 12b — Unclamped Inductive Waveforms
60
40
20
ID = 25A
0 VDD = 25V
25 50
75
A
100 125 150 175
S tarting TJ , Ju nctio n Te m p eratu re (°C )
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate Charge Test Circuit
5 Page | ||
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| PDF Descargar | [ Datasheet IRFY130CM.PDF ] | |
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