DataSheet.jp

IRF6629PBF の電気的特性と機能

IRF6629PBFのメーカーはInternational Rectifierです、この部品の機能は「DirectFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6629PBF
部品説明 DirectFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRF6629PBFダウンロード(pdfファイル)リンクがあります。
Total 10 pages

No Preview Available !

IRF6629PBF Datasheet, IRF6629PBF PDF,ピン配置, 機能
PD - 97235
IRF6629PbF
www.DataSheet4U.com
l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
IRF6629TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 1.6m@ 10V 2.1m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
34nC 11nC 4.2nC 27nC 23nC 1.8V
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6629PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6629PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6629PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±20
29
23
180
230
1170
23
Units
V
A
mJ
A
8
7
6
5
4
3
2
1
0
TJ = 25°C
246
ID = 29A
TJ = 125°C
8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
5.0 ID= 23A
4.0
3.0
VDS= 20V
VDS= 13V
VDS= 5.0V
2.0
1.0
0.0
0
10 20 30 40
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 4.4mH, RG = 25, IAS = 23A.
1
07/11/06

1 Page





IRF6629PBF pdf, ピン配列
IRF6629PbF
Absolute Maximum Ratings
www.DataSheet4U.com
Parameter
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
ePower Dissipation
ePower Dissipation
fPower Dissipation
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
emJunction-to-Ambient
kmJunction-to-Ambient
lmJunction-to-Ambient
fmJunction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
Max.
2.8
1.8
100
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.2
–––
Units
W
°C
Units
°C/W
W/°C
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005 0.0001
0.001
τJ τJ
τ1 τ1
R1R1
CiC= iτ=iRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τAτA 7.628 0.069875
τ3τ3 20.661 1.140300
16.718 39.9
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10 100 1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
‰ Used double sided cooling , mounting pad.
Š Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
‹ Rθ is measured at TJ of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
(still air).
www.irf.com
‰ Mounted to a PCB with
small clip heatsink (still air)
Š Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3


3Pages


IRF6629PBF 電子部品, 半導体
IRF6629PbF
Current Regulator
www.DSaamtaeShTeyepte4Ua.scoDm.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 15b. Gate Charge Waveform
15V
VDS
L
VRGGS
20V
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 17a. Switching Time Test Circuit
6
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com

6 Page



ページ 合計 : 10 ページ
 
PDF
ダウンロード
[ IRF6629PBF データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF6629PBF

DirectFET Power MOSFET

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap