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PDF NSS1C200LT1G Data sheet ( 特性 )

部品番号 NSS1C200LT1G
部品説明 Low VCE(sat) PNP Transistor
メーカ ON Semiconductor
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NSS1C200LT1G Datasheet, NSS1C200LT1G PDF,ピン配置, 機能
NSS1C200LT1G
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100 V, 3.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor's e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
ăThis is a Pb-Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
Collector Current - Continuous
Collector Current - Peak
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
ICM
-100
-140
-7.0
-2.0
-3.0
Vdc
Vdc
Vdc
A
A
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
490 mW
3.7 mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA (Note 1)
255
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
710 mW
4.3 mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA (Note 2)
176
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
-55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-ā4 @ 100 mm2, 1 oz. copper traces.
2. FR-ā4 @ 500 mm2, 1 oz. copper traces.
©Ă Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
1
http://onsemi.com
-100 VOLTS, 3.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-23 (TO-236)
CASE 318
STYLE 6
DEVICE MARKING
VL MG
G
1
VL = Specific Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NSS1C200LT1G SOT-23 3000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C200L/D

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NSS1C200LT1G pdf, ピン配列
500
www4.0D0ataSheet4U.com
300
200
100
150°C
25°C
-55°C
NSS1C200LT1G
VCE = 2 V
500
400
300
200
100
0
0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
0
10 0.001
11
150°C
25°C
-55°C
VCE = 4 V
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
10
0.1
25°C
150°C
0.1 150°C
25°C
-55°C
0.01
0.001
0.01
-55°C
0.1
IC/IB = 10
1 10
IC, COLLECTOR CURRENT (A)
Figure 4. Collector-Emitter Saturation Voltage
0.01
0.001
0.01
0.1
IC/IB = 50
1 10
IC, COLLECTOR CURRENT (A)
Figure 5. Collector-Emitter Saturation Voltage
1.2
1.0
-55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
0.01
0.1
IC/IB = 10
1
IC, COLLECTOR CURRENT (A)
Figure 6. Base-Emitter Saturation Voltage
10
1.2
1.0
-55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
0.01
0.1
IC/IB = 50
1 10
IC, COLLECTOR CURRENT (A)
Figure 7. Base-Emitter Saturation Voltage
http://onsemi.com
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