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AT25F512BのメーカーはATMEL Corporationです、この部品の機能は「512-Kilobit 2.7-volt Minimum SPI Serial Flash Memory」です。 |
部品番号 | AT25F512B |
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部品説明 | 512-Kilobit 2.7-volt Minimum SPI Serial Flash Memory | ||
メーカ | ATMEL Corporation | ||
ロゴ | |||
このページの下部にプレビューとAT25F512Bダウンロード(pdfファイル)リンクがあります。 Total 30 pages
Features
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• Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
• 70 MHz Maximum Operating Frequency
– Clock-to-Output (tV) of 6 ns Maximum
• Flexible, Optimized Erase Architecture for Code + Data Storage Applications
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Full Chip Erase
• Hardware Controlled Locking of Protected Sectors via WP Pin
• 128-Byte Programmable OTP Security Register
• Flexible Programming
– Byte/Page Program (1 to 256 Bytes)
• Fast Program and Erase Times
– 2.5 ms Typical Page Program (256 Bytes) Time
– 100 ms Typical 4-Kbyte Block Erase Time
– 500 ms Typical 32-Kbyte Block Erase Time
• Automatic Checking and Reporting of Erase/Program Failures
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation
– 6 mA Active Read Current (Typical at 20 MHz)
– 5 µA Deep Power-Down Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (150-mil Wide)
– 8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)
1. Description
The AT25F512B is a serial interface Flash memory device designed for use in a wide
variety of high-volume consumer based applications in which program code is shad-
owed from Flash memory into embedded or external RAM for execution. The flexible
erase architecture of the AT25F512B, with its erase granularity as small as 4 Kbytes,
makes it ideal for data storage as well, eliminating the need for additional data storage
EEPROM devices.
The erase block sizes of the AT25F512B have been optimized to meet the needs of
today's code and data storage applications. By optimizing the size of the erase blocks,
the memory space can be used much more efficiently. Because certain code modules
and data storage segments must reside by themselves in their own erase regions, the
wasted and unused memory space that occurs with large sectored and large block
erase Flash memory devices can be greatly reduced. This increased memory space
efficiency allows additional code routines and data storage segments to be added
while still maintaining the same overall device density.
The device also contains a specialized OTP (One-Time Programmable) Security Reg-
ister that can be used for purposes such as unique device serialization, system-level
Electronic Serial Number (ESN) storage, locked key storage, etc.
Specifically designed for use in 3-volt systems, the AT25F512B supports read, pro-
gram, and erase operations with a supply voltage range of 2.7V to 3.6V. No separate
voltage is required for programming and erasing.
512-Kilobit
2.7-volt
Minimum
SPI Serial Flash
Memory
AT25F512B
Preliminary
3689C–DFLASH–12/08
1 Page Figwuwrew.2D-a1ta. She8e-t4SUO.cIoCmTop View
CS
SO
WP
GND
1
2
3
4
8 VCC
7 HOLD
6 SCK
5 SI
AT25F512B [Preliminary]
Figure 2-2. 8-UDFN (Top View)
CS 1
SO 2
WP 3
GND 4
8 VCC
7 HOLD
6 SCK
5 SI
3. Block Diagram
Figure 3-1. Block Diagram
CS
SCK
SI
SO
WP
HOLD
INTERFACE
CONTROL
AND
LOGIC
CONTROL AND
PROTECTION LOGIC
Y-DECODER
X-DECODER
I/O BUFFERS
AND LATCHES
SRAM
DATA BUFFER
Y-GATING
FLASH
MEMORY
ARRAY
3689C–DFLASH–12/08
3
3Pages Table 6-1. Command Listing
www.DataSheet4U.com
Command
Read Commands
Read Array
Program and Erase Commands
Block Erase (4 Kbytes)
Block Erase (32 Kbytes)
Chip Erase
Chip Erase (Legacy Command)
Byte/Page Program (1 to 256 Bytes)
Protection Commands
Write Enable
Write Disable
Security Commands
Program OTP Security Register
Read OTP Security Register
Status Register Commands
Read Status Register
Write Status Register
Miscellaneous Commands
Read Manufacturer and Device ID
Read ID (Legacy Command)
Deep Power-Down
Resume from Deep Power-Down
Opcode
Clock
Frequency
Address Dummy
Bytes
Bytes
Data
Bytes
0Bh 0000 1011 Up to 70 MHz
03h 0000 0011 Up to 33 MHz
3
3
1 1+
0 1+
20h 0010 0000 Up to 70 MHz
52h 0101 0010 Up to 70 MHz
D8h 1101 1000 Up to 70 MHz
60h 0110 0000 Up to 70 MHz
C7h 1100 0111 Up to 70 MHz
62h 0110 0010 Up to 70 MHz
02h 0000 0010 Up to 70 MHz
3
3
3
0
0
0
3
00
00
00
00
00
00
0 1+
06h 0000 0110 Up to 70 MHz
0
0
0
04h 0000 0100 Up to 70 MHz
0
0
0
9Bh 1001 1011 Up to 70 MHz
77h 0111 0111 Up to 70 MHz
3
3
0 1+
2 1+
05h 0000 0101 Up to 70 MHz
01h 0000 0001 Up to 70 MHz
0
0
0 1+
01
9Fh 1001 1111 Up to 70 MHz
15h 0001 0101 Up to 70 MHz
B9h 1011 1001 Up to 70 MHz
ABh 1010 1011 Up to 70 MHz
0
0
0
0
0 1 to 4
02
00
00
6 AT25F512B [Preliminary]
3689C–DFLASH–12/08
6 Page | |||
ページ | 合計 : 30 ページ | ||
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PDF ダウンロード | [ AT25F512B データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AT25F512 | SPI Serial Memory | ATMEL Corporation |
AT25F512A | 512Kbit High Speed SPI Serial Flash Memory | ATMEL Corporation |
AT25F512B | 512-Kbit 2.7V Minimum SPI Serial Flash Memory | Adesto |
AT25F512B | 512-Kilobit 2.7-volt Minimum SPI Serial Flash Memory | ATMEL Corporation |