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IKW75N60T の電気的特性と機能

IKW75N60TのメーカーはInfineon Technologiesです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IKW75N60T
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




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IKW75N60T Datasheet, IKW75N60T PDF,ピン配置, 機能
IKW75N60T
TRENCHSTOPSeries
q
Low Loss DuoPack : IGBT in TRENCHSTOPand Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Positive temperature coefficient in VCE(sat)
very tight parameter distribution
high ruggedness, temperature stable behaviour
very high switching speed
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Frequency Converters
Uninterrupted Power Supply
C
G
E
PG-TO247-3
Type
IKW75N60T
VCE
600V
IC
75A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
K75T60
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by Tjmax
Diode pulsed current, tp limited by Tjmax
TC = 25C
TC = 100C
Gate-emitter voltage
Short circuit withstand time3)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Tsold
Value
600
802)
75
225
225
802)
75
225
20
5
428
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1) J-STD-020 and JESD-022
2) Value limited by bondwire
3) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.8 2013-12-05

1 Page





IKW75N60T pdf, ピン配列
IKW75N60T
TRENCHSTOPSeries
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=400V,IC=75A,
VGE=0/15V,
rG=5, L=100nH,
C=39pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Tj=25C,
VR=400V, IF=75A,
diF/dt=1460A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
33
36
330
35
2.0
2.5
4.5
121
2.4
38.5
921
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175C,
VCC=400V,IC=75A,
VGE=0/15V,
rG=5, L=100nH,
C=39pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Tj=175C
VR=400V, IF=75A,
diF/dt=1460A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
32
37
363
38
2.9
2.9
5.8
182
5.8
56.2
1013
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
IFAG IPC TD VLS
3
Rev. 2.8 2013-12-05


3Pages


IKW75N60T 電子部品, 半導体
IKW75N60T
TRENCHSTOPSeries
q
t d(off)
100ns
tf
td(on)
10ns
0A
tr
40A
80A
120A
Figure 9.
IC, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 5Ω,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
tr
td(on)
10ns

 
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
tr
td(on)
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 75A, rG=5Ω,
Dynamic test circuit in Figure E)
7V
6V
max.
typ.
5V
4V min.
3V
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1.2mA)
IFAG IPC TD VLS
6
Rev. 2.8 2013-12-05

6 Page



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