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IKB03N120H2 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IKB03N120H2
部品説明 HighSpeed 2-Technology
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 



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IKB03N120H2 Datasheet, IKB03N120H2 PDF,ピン配置, 機能
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IKP03N120H2,
IKW03N120H2
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
VCE
IC
Eoff
Tj Package
Ordering Code
IKW03N120H2 1200V 3A 0.15mJ 150°C P-TO-247
Q67040-S4595
IKP03N120H2 1200V 3A 0.15mJ 150°C P-TO-220-3-1
Q67040-S4594
IKB03N120H2
1200V 3A
0.15mJ 150°C P-TO-263 (D2PAK) Q67040-S4597
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
VGE
Ptot
Tj , Tstg
-
Value
1200
9.6
3.9
9.9
9.9
Unit
V
A
9.6
3.9
±20 V
62.5 W
-40...+150
260
225 (for SMD)
°C
Power Semiconductors
1
Rev. 2, Mar-04

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部品番号部品説明メーカ
IKB03N120H2

HighSpeed 2-Technology

Infineon Technologies
Infineon Technologies

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