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IKP03N120H2 の電気的特性と機能

IKP03N120H2のメーカーはInfineon Technologiesです、この部品の機能は「HighSpeed 2-Technology」です。


製品の詳細 ( Datasheet PDF )

部品番号 IKP03N120H2
部品説明 HighSpeed 2-Technology
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




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IKP03N120H2 Datasheet, IKP03N120H2 PDF,ピン配置, 機能
www.DataSheet4U.com
IKP03N120H2,
IKW03N120H2
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
VCE
IC
Eoff
Tj Package
Ordering Code
IKW03N120H2 1200V 3A 0.15mJ 150°C P-TO-247
Q67040-S4595
IKP03N120H2 1200V 3A 0.15mJ 150°C P-TO-220-3-1
Q67040-S4594
IKB03N120H2
1200V 3A
0.15mJ 150°C P-TO-263 (D2PAK) Q67040-S4597
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
VGE
Ptot
Tj , Tstg
-
Value
1200
9.6
3.9
9.9
9.9
Unit
V
A
9.6
3.9
±20 V
62.5 W
-40...+150
260
225 (for SMD)
°C
Power Semiconductors
1
Rev. 2, Mar-04

1 Page





IKP03N120H2 pdf, ピン配列
IKP03N120H2,
IKW03N120H2
www.DataSheet4U.com
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during tb
trr
Qrr
Irrm
diF/dt
dirr/dt
Tj=25°C,
VCC=800V,IC=3A,
VGE=15V/0V,
RG=82,
Lσ2)=180nH,
Cσ2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
Tj=25°C,
VR=800V, IF=3A,
RG=82
IKB03N120H2
min.
Value
typ.
Unit
max.
- 9.2 - ns
- 5.2 -
- 281 -
- 29 -
- 0.14 - mJ
- 0.15 -
- 0.29 -
- 42 - ns
- 0.23 - µC
- 10.3 - A
- 993 - A/µs
- 1180 -
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during tb
trr
Qrr
Irrm
diF/dt
dirr/dt
Tj=150°C
VCC=800V,
IC=3A,
VGE=15V/0V,
RG=82,
Lσ2)=180nH,
Cσ2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
Tj=150°C
VR=800V, IF=3A,
RG=82
min.
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
9.4
6.7
340
63
0.22
0.26
0.48
125
0.51
12
829
540
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
-
2)
3)
Leakage inductance Lσ and stray capacity Cσ due
Commutation diode from device IKP03N120H2
to
dynamic
test
circuit
in
figure
E
Power Semiconductors
3
Rev. 2, Mar-04


3Pages


IKP03N120H2 電子部品, 半導体
www.DataSheet4U.com
IKP03N120H2,
IKW03N120H2
IKB03N120H2
10A
8A
VGE=15V
12V
6A 10V
8V
6V
4A
2A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
10A
9A
8A
7A VGE=15V
6A
12V
10V
5A
8V
6V
4A
3A
2A
1A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
12A
10A
8A Tj=+150°C
6A Tj=+25°C
4A
2A
0A
3V 5V 7V 9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
3V
IC=6A
IC=3A
2V
IC=1.5A
1V
0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
6
Rev. 2, Mar-04

6 Page



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部品番号部品説明メーカ
IKP03N120H2

HighSpeed 2-Technology

Infineon Technologies
Infineon Technologies


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